Ultraviolet photodiode fabricated from TiO2 nanorods/p-silicon heterojunction

被引:16
作者
Sekertekin, Betul [1 ]
Ozel, Kenan [2 ,3 ]
Atilgan, Abdullah [3 ,4 ]
Yildiz, Abdullah [3 ]
机构
[1] Kalyon PV Res & Dev Ctr, TR-06909 Ankara, Turkey
[2] Ankara Univ, GAMA Vocat Sch, Dept Elect & Energy, TR-06120 Ankara, Turkey
[3] Ankara Yildirim Beyazit Univ, Fac Engn & Nat Sci, Dept Energy Syst Engn, TR-06010 Ankara, Turkey
[4] Ankara Yildirim Beyazit Univ, Cent Res Lab, Applicat & Res Ctr, TR-06010 Ankara, Turkey
关键词
p-Si; TiO2; Nanorods; UV photodiodes; Semiconductors; Electrical properties; NANOWIRES; JUNCTION;
D O I
10.1016/j.matlet.2022.132565
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, an ultraviolet (UV) photodiode in p-n heterojunction configuration is fabricated from TiO2 nanorods hydrothermally deposited on p-type silicon substrate. Under UV illumination condition, the heterojunction photodiode shows superior UV detection capability achieving a photoresponsivity of 1.41 A/W, a photosensitivity of 80 and a detectivity of 8.32 x 10(11) Jones with a quick response speed of 25 ms. More significantly, the presented fabrication approach can be applicable to other metal-oxide semiconductor based optoelectronic devices.
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页数:3
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