An investigation on InxGa1-xN/GaN multiple quantum well solar cells

被引：25

作者：

Deng, Qingwen ^{[1
]}

Wang, Xiaoliang ^{[1
,2
,3
]}

Xiao, Hongling ^{[1
,2
]}

Wang, Cuimei ^{[1
,2
]}

Yin, Haibo ^{[1
,2
]}

Chen, Hong ^{[1
,2
]}

Hou, Qifeng ^{[1
]}

Lin, Defeng ^{[1
]}

Li, Jinmin ^{[1
,2
,3
]}

Wang, Zhanguo ^{[2
]}

Hou, Xun ^{[3
]}

机构：

[1] Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China

[3] ISCAS XJTU Joint Lab Funct Mat & Devices Informat, Beijing 100083, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2011年 / 44卷 / 26期

基金：

中国国家自然科学基金;

关键词：

FUNDAMENTAL-BAND GAP; PHASE-SEPARATION; EFFICIENCY; INN; EMISSION; LAYERS; MODEL;

D O I：

10.1088/0022-3727/44/26/265103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The conversion efficiency of InxGa1-xN/GaN multiple quantum well solar cells is originally investigated in theory based on the ideal diode model and the ideal unity quantum well model. The results reveal that the conversion efficiency partially depends on the width of the quantum well and the thickness of the barrier region but is dominated by the number of quantum wells and indium content of InxGa1-xN. The calculated results are found to be basically trustworthy by comparing with reported experimental results. An In0.15Ga0.85N/GaN multiple quantum well solar cell is successfully fabricated with a conversion efficiency of 0.2%. The main discrepancy between calculated and experimental results is the material quality and manufacturing technology which need to be improved.

引用

页数：6

共 35 条

[1] IDEAL THEORY OF QUANTUM-WELL SOLAR-CELLS [J].

ANDERSON, NG .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) :1850-1861

[2] Voltage enhancement in quantum well solar cells [J].

Barnham, K ;

Connolly, J ;

Griffin, P ;

Haarpaintner, G ;

Nelson, J ;

Tsui, E ;

Zachariou, A ;

Osborne, J ;

Button, C ;

Hill, G ;

Hopkinson, M ;

Pate, M ;

Roberts, J ;

Foxon, T .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (02) :1201-1206

[3] Fabrication and characterization of InGaN p-i-n homojunction solar cell [J].

Cai, Xiao-mei ;

Zeng, Sheng-wei ;

Zhang, Bao-ping .

APPLIED PHYSICS LETTERS, 2009, 95 (17)

[4] Direct evidence of nanocluster-induced luminescence in InGaN epifilms [J].

Chang, HJ ;

Chen, CH ;

Chen, YF ;

Lin, TY ;

Chen, LC ;

Chen, KH ;

Lan, ZH .

APPLIED PHYSICS LETTERS, 2005, 86 (02) :021911-1

[5] Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors [J].

Chichibu, Shigefusa F. ;

Uedono, Akira ;

Onuma, Takeyoshi ;

Haskell, Benjamin A. ;

Chakraborty, Arpan ;

Koyama, Takahiro ;

Fini, Paul T. ;

Keller, Stacia ;

Denbaars, Steven P. ;

Speck, James S. ;

Mishra, Umesh K. ;

Nakamura, Shuji ;

Yamaguchi, Shigeo ;

Kamiyama, Satoshi ;

Amano, Hiroshi ;

Akasaki, Isamu ;

Han, Jung ;

Sota, Takayuki .

NATURE MATERIALS, 2006, 5 (10) :810-816

[6] InGaN/GaN multiple quantum well concentrator solar cells [J].

Dahal, R. ;

Li, J. ;

Aryal, K. ;

Lin, J. Y. ;

Jiang, H. X. .

APPLIED PHYSICS LETTERS, 2010, 97 (07)

[7]

Davydov VY, 2002, PHYS STATUS SOLIDI B, V229, pR1, DOI 10.1002/1521-3951(200202)229:3<R1::AID-PSSB99991>3.0.CO

[8]

2-O

[9] Theoretical study on InxGa1-xN/GaN quantum dots solar cell [J].

Deng, Qingwen ;

Wang, Xiaoliang ;

Yang, Cuibai ;

Xiao, Hongling ;

Wang, Cuimei ;

Yin, Haibo ;

Hou, Qifeng ;

Li, Jinmin ;

Wang, Zhanguo ;

Hou, Xun .

PHYSICA B-CONDENSED MATTER, 2011, 406 (01) :73-76

[10] Group-III nitride quantum heterostructures grown by molecular beam epitaxy [J].

Grandjean, N ;

Damilano, B ;

Massies, J .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (32) :6945-6960

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