Chemical doping of graphene

被引：1449

作者：

Liu, Hongtao ^{[1
,2
]}

Liu, Yunqi ^{[1
]}

Zhu, Daoben ^{[1
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Mol Sci, Key Lab Organ Solids, Inst Chem, Beijing 100190, Peoples R China

[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China

来源：

JOURNAL OF MATERIALS CHEMISTRY | 2011年 / 21卷 / 10期

基金：

中国国家自然科学基金;

关键词：

CHARGED-IMPURITY SCATTERING; FIELD-EFFECT TRANSISTORS; P-N-JUNCTIONS; EPITAXIAL GRAPHENE; ELECTRONIC-STRUCTURE; LARGE-AREA; DOPED GRAPHENE; BERRYS PHASE; CARBON; TRANSPORT;

D O I：

10.1039/c0jm02922j

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Recently, a lot of effort has been focused on improving the performance and exploring the electric properties of graphene. This article presents a summary of chemical doping of graphene aimed at tuning the electronic properties of graphene. p-Type and n-type doping of graphene achieved through surface transfer doping or substitutional doping and their applications based on doping are reviewed. Chemical doping for band gap tuning in graphene is also presented. It will be beneficial to designing high performance electronic devices based on chemically doped graphene.

引用

页码：3335 / 3345

页数：11

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