Mechanical deformation of InP and GaAs by spherical indentation

被引：98

作者：

Bradby, JE ^{[1
]}

Williams, JS

Wong-Leung, J

Swain, MV

Munroe, P

机构：

[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

[2] Univ Sydney, Dept Mech & Mechatron Engn, Biomat Sci Res Unit, Eveleigh, NSW 1430, Australia

[3] Univ Sydney, Fac Dent, Eveleigh, NSW 1430, Australia

[4] Univ New S Wales, Electron Microscope Unit, Sydney, NSW 2052, Australia

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 21期

关键词：

D O I：

10.1063/1.1372207

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mechanical deformation by spherical indentation of both crystalline InP and GaAs was characterized using cross-sectional transmission electron microscopy (XTEM) and atomic force microscopy. All load-unload curves show a discontinuity (or "pop in") during loading. Slip bands oriented along {111} planes are visible in XTEM micrographs from residual indentations in both materials and no evidence of any phase transformations was found. Higher load indentations (35 mN for InP and 50 mN for GaAs) also revealed subsurface cracking. In contrast no cracking was found beneath a 25 mN InP indent although the hardness and modulus data are almost identical to those of the cracked sample. The subsurface cracks are thought to be nucleated by high stress concentrations caused by dislocation pileup. (C) 2001 American Institute of Physics.

引用

页码：3235 / 3237

页数：3

共 15 条

[1] Transmission electron microscopy observation of deformation microstructure under spherical indentation in silicon [J].