Selective growth of ZnSe and ZnCdSe nanowires by molecular beam epitaxy

被引：36

作者：

Colli, A ^{[1
]}

Hofmann, S

Ferrari, AC

Martelli, F

Rubini, S

Ducati, C

Franciosi, A

Robertson, J

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

[2] INFM, Lab Nazl TASC, I-34012 Trieste, Italy

[3] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

[4] Univ Trieste, Dipartimento Fis, I-34127 Trieste, Italy

来源：

NANOTECHNOLOGY | 2005年 / 16卷 / 05期

关键词：

D O I：

10.1088/0957-4484/16/5/001

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Controlled growth of ZnSe and ZnCdSe nanowires is demonstrated by molecular beam epitaxy using Au or Ag catalyst films in the temperature range 400-550 degrees C. The highest density of small-diameter (10 nm), highly-crystalline ZnSe nanowires is achieved by using Au at 400 degrees C. Direct growth onto transmission electron microscope grids clearly indicates a tip-growth regime. Pre-patterning of the catalyst film allows highly selective ZnSe deposition as probed by photoluminescence and Raman spectroscopy. In similar conditions, the addition of Cd vapour in the MBE reactor allows the synthesis of ZnCdSe ternary nanowires.

引用

收藏

页码：S139 / S142

页数：4

相关论文

共 50 条

[21] Selective growth conditions of ZnSe/ZnS heterostructures on (001) GaAs with metalorganic molecular beam epitaxy [J].

Ueta, A ;

Suemune, I ;

Uesugi, K ;

Arita, M ;

Avramescu, A ;

Numai, T ;

Machida, H ;

Shimoyama, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (08) :5044-5049

[22] ZnSe/CdSe superlattice nanowires by catalyst-assisted molecular beam epitaxy [J].

Karczewski, G. ;

Mahapatra, S. ;

Borzenko, T. ;

Dluewski, P. ;

Kret, S. ;

Klopotowski, L. ;

Schumacher, C. ;

Brunner, K. ;

Molenkamp, L. W. ;

Wojtowicz, T. .

PHYSICS OF SEMICONDUCTORS, PTS A AND B, 2007, 893 :65-+

[23] CARRIER RECOMBINATION STUDIES OF ZNCDSE/ZNSE SINGLE QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

MASSA, JS ;

BULLER, GS ;

WALKER, AC ;

HORSBURGH, G ;

MULLINS, JT ;

PRIOR, KA ;

CAVENETT, BC .

APPLIED PHYSICS LETTERS, 1995, 66 (11) :1346-1348

[24] ZnMgSe/ZnCdSe-based distributed Bragg mirrors grown by molecular-beam epitaxy on ZnSe substrates [J].

Kozlovskii, VI ;

Trubenko, PA ;

Korostelin, YV ;

Roddatis, VV .

SEMICONDUCTORS, 2000, 34 (10) :1186-1192

[25] ZnMgSe/ZnCdSe-based distributed bragg mirrors grown by molecular-beam epitaxy on ZnSe substrates [J].

V. I. Kozlovskii ;

P. A. Trubenko ;

Yu. V. Korostelin ;

V. V. Roddatis .

Semiconductors, 2000, 34 :1186-1192

[26] ZnSe nanowires epitaxially grown on GaP(111) substrates by molecular-beam epitaxy [J].

Chan, YF ;

Duan, XF ;

Chan, SK ;

Sou, IK ;

Zhang, XX ;

Wang, N .

APPLIED PHYSICS LETTERS, 2003, 83 (13) :2665-2667

[27] Semiconductor laser with longitudinal electron-beam pumping and based on a quantum-well ZnCdSe/ZnSe structure grown on a ZnSe substrate by molecular beam epitaxy [J].

Kozlovskii, VI ;

Trubenko, PA ;

Dianov, EM ;

Korostelin, YV ;

Skasyrskii, YK ;

Shapkin, PV .

QUANTUM ELECTRONICS, 1998, 28 (04) :294-296

[28] Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy [J].

Bertness, K. A. ;

Roshko, A. ;

Mansfield, L. M. ;

Harvey, T. E. ;

Sanford, N. A. .

JOURNAL OF CRYSTAL GROWTH, 2008, 310 (13) :3154-3158

[29] Molecular beam epitaxy growth and optical properties of AlN nanowires [J].

Landre, O. ;

Fellmann, V. ;

Jaffrennou, P. ;

Bougerol, C. ;

Renevier, H. ;

Cros, A. ;

Daudin, B. .

APPLIED PHYSICS LETTERS, 2010, 96 (06)

[30] Growth by molecular beam epitaxy and electrical characterization of GaAs nanowires [J].

Piccin, M. ;

Bais, G. ;

Grillo, V. ;

Jabeen, F. ;

De Franceschi, S. ;

Carlino, E. ;

Lazzarino, M. ;

Romanato, F. ;

Businaro, L. ;

Rubini, S. ;

Martelli, F. ;

Franciosi, A. .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 37 (1-2) :134-137

← 1 2 3 4 5 →