Tailoring Perovskite Adjacent Interfaces by Conjugated Polyelectrolyte for Stable and Efficient Solar Cells

被引:29
作者
Li, Bowei [1 ]
Xiang, Yuren [1 ]
Jayawardena, K. D. G. Imalka [1 ]
Luo, Deying [2 ,3 ]
Watts, John F. [4 ]
Hinder, Steven [4 ]
Li, Hui [1 ,5 ]
Ferguson, Victoria [1 ]
Luo, Haitian [5 ]
Zhu, Rui [2 ,3 ]
Silva, S. Ravi P. [1 ]
Zhang, Wei [1 ]
机构
[1] Univ Surrey, Adv Technol Inst, Dept Elect & Elect Engn, Guildford GU2 7XH, Surrey, England
[2] Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Frontiers Sci Ctr Nanooptoelect, Sch Phys, Beijing 100871, Peoples R China
[3] Peking Univ, Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
[4] Univ Surrey, Dept Mech Engn Sci, Surface Anal Lab, Guildford GU2 7XH, Surrey, England
[5] Chinese Acad Sci, Inst Elect Engn, Beijing, Peoples R China
基金
欧盟地平线“2020”; 英国工程与自然科学研究理事会; 中国博士后科学基金;
关键词
conjugated polyelectrolytes; interface engineering; nonradiative recombination; perovskite solar cells; LIGHT-EMITTING-DIODES; PERFORMANCE; PASSIVATION;
D O I
10.1002/solr.202000060
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Interface engineering is an effective means to enhance the performance of thin-film devices, such as perovskite solar cells (PSCs). Herein, a conjugated polyelectrolyte, poly[(9,9-bis(3 '-((N,N-dimethyl)-N-ethyl-ammonium)-propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)]di-iodide (PFN-I), is used at the interfaces between the hole transport layer (HTL)/perovskite and perovskite/electron transport layer simultaneously, to enhance the device power conversion efficiency (PCE) and stability. The fabricated PSCs with an inverted planar heterojunction structure show improved open-circuit voltage (V-oc), short-circuit current density (J(sc)), and fill factor, resulting in PCEs up to 20.56%. The devices maintain over 80% of their initial PCEs after 800 h of exposure to a relative humidity 35-55% at room temperature. All of these improvements are attributed to the functional PFN-I layers as they provide favorable interface contact and defect reduction.
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页数:8
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