Memristor emulator with tunable characteristic and its experimental results

被引:99
作者
Babacan, Yunus [1 ]
Yesil, Abdullah [2 ]
Kacar, Firat [3 ]
机构
[1] Erzincan Univ, Dept Elect & Elect Engn, Erzincan, Turkey
[2] Bandirma Onyedi Eylul Univ, Dept Naval Architecture & Marine Engn, TR-10200 Balikesir, Turkey
[3] Istanbul Univ, Dept Elect & Elect Engn, Istanbul, Turkey
关键词
Memristor; Emulator; Decremental configuration; Incremental configuration; Non-volatility; CMOS; Experimental results; CIRCUIT;
D O I
10.1016/j.aeue.2017.07.012
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, operational transconductance amplifier (OTA) based simple and practical TiO2 memristor emulator is presented. The proposed memristor emulator employs a multi-outputs OTA, an analog multiplier and a resistor and a capacitor. The parameters of the proposed memristor emulator can be tuned electronically by changing the biasing current of the OTA. Change of the transconductance gain of the OTA provides an advantage: "externally controllable memristor". Non-volatile resistive switching characteristics and an application of this proposed memristor are given. Also, the memristor emulator is implemented using the commonly available OPA860. The effectiveness of the proposed memristor emulator is verified by the experimental results, which show good agreement with the theoretical and simulation results. (C) 2017 Elsevier GmbH. All rights reserved.
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页码:99 / 104
页数:6
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