Structural and optical properties of WS2 prepared using sulfurization of different thick sputtered tungsten films

被引:13
|
作者
Hotovy, I. [1 ]
Spiess, L. [4 ]
Sojkova, M. [2 ]
Kostic, I. [3 ]
Mikolasek, M. [1 ]
Predanocy, M. [1 ]
Romanus, H. [4 ]
Hulman, M. [2 ]
Rehacek, V. [1 ]
机构
[1] Slovak Univ Technol Bratislava, Inst Elect & Photon, Ilkovicova 3, Bratislava 81219, Slovakia
[2] SAS, Inst Elect Engn, Dubravska Cesta 9, Bratislava 84104, Slovakia
[3] Slovak Acad Sci, Inst Informat, Dubravska Cesta 9, Bratislava 84507, Slovakia
[4] Tech Univ Ilmenau, Inst Mikro & Nanotechnol, Gustav Kirchhoff Str 5, D-98693 Ilmenau, Germany
基金
欧盟地平线“2020”;
关键词
Transition metal dichalcogenides; WS2; Thin film; Sulfurization; Direct bandgap; TRANSITION;
D O I
10.1016/j.apsusc.2018.05.209
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Our activities were focused on the preparation of WS2 films on sapphire substrates by sulfurization of different thick sputtered W films. The influence of very thin W films in the range from 4 nm to 12 nm on the structural, morphological and optical properties of WS2 was investigated. XRD measurements revealed a polycrystalline nature with hexagonal symmetry and randomly connected nanocrystals with grain size about 6 nm for all WS2 films. Using Raman spectroscopy with a 532 nm laser excitation, the presence of characteristic E-2g(1) and A(1g) vibration modes was recorded and the multilayered nature of the prepared WS2 films was confirmed. FESEM observations revealed randomly oriented lamellar and flake-shaped microstructures with the basal plane of the WS2 crystallites. Thinner WS2 films (20 and 24 nm) showed highly dense horizontally aligned flakes. On the other hand, thicker WS2 films (33 and 42 nm) indicated a granular surface and the WS2 crystallites grew perpendicularly to the substrate surface. All examined WS2 films were transparent from 30 to 78% in the spectral range of 500 to 900 nm and showed a direct bandgap of 2.3 eV.
引用
收藏
页码:133 / 138
页数:6
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