Characterization and modeling of gate-induced-drain-leakage

We present measurements of Gate-Induced-Drain-Leakage at various temperatures and terminal biases. Besides Band-to-Band tunneling leakage observed at high Drain-to-Gate voltage V-DG, we also observed Trap-Assisted-Tunneling leakage current at lower V-DG. Based on ISE TCAD simulations of the electric field, we propose analytical models for Band-to-Band and Trap-Assisted Gate-Induced-Drain-Leakage currents suitable for compact modeling.