Twist-Dependent Raman and Electron Diffraction Correlations in Twisted Multilayer Graphene

被引：31
作者：
Gupta, Nikita [1 ]
Walia, Sunil [2 ,3 ]
Moger, Umesh [1 ]
Kulkarni, Giridhar U. [1 ]
机构：
[1] Jawaharlal Nehru Ctr Adv Sci Res, Chem & Phys Mat Unit, Bangalore 560064, Karnataka, India
[2] Ctr Nano & Soft Matter Sci, Bangalore 560013, Karnataka, India
[3] Manipal Acad Higher Educ, Manipal 576104, India
来源：
JOURNAL OF PHYSICAL CHEMISTRY LETTERS | 2020年 / 11卷 / 08期
关键词：
BILAYER; GRAPHITE;
D O I：
10.1021/acs.jpclett.0c00582
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Twisted multilayer graphene (tMLG), in contrast to twisted bilayer graphene, offers a range of angular rotations for tuning the properties of the system. In this work, a turbostratic graphene system with a high degree of two-dimensional (2D) crystallinity is chosen to represent tMLG. We have investigated the distribution and population of twist angles from distributed sextets in electron diffraction (SAED) patterns with the collective Raman behavior at the same locations. A descriptor, termed the turbostratic factor, was calculated on the basis of angular spacings in SAEDs, to account for their distribution; the greater the spread, the higher the turbostratic factor. Raman spectra have revealed that the turbostratic factor remains low (similar to 0 degrees) for a graphitic region with a low 2D to G intensity ratio (I-2D/I-G) and increases rapidly at higher I-2D/I-G values, saturating at 60 degrees for highly turbostratic systems. Relating the intensities associated with the sextets and I-2D/I-G values, we found the maximum achievable value of I-2D/I-G to be 17.92.
引用
收藏
页码：2797 / 2803
页数：7
相关论文
共 33 条
[1]   Unraveling the Intrinsic and Robust Nature of van Hove Singularities in Twisted Bilayer Graphene by Scanning Tunneling Microscopy and Theoretical Analysis [J].
Brihuega, I. ;
Mallet, P. ;
Gonzalez-Herrero, H. ;
de laissardiere, G. Trambly ;
Ugeda, M. M. ;
Magaud, L. ;
Gomez-Rodriguez, J. M. ;
Yndurain, F. ;
Veuillen, J. -Y. .
PHYSICAL REVIEW LETTERS, 2012, 109 (19)
[2]   Unconventional superconductivity in magic-angle graphene superlattices [J].
Cao, Yuan ;
Fatemi, Valla ;
Fang, Shiang ;
Watanabe, Kenji ;
Taniguchi, Takashi ;
Kaxiras, Efthimios ;
Jarillo-Herrero, Pablo .
NATURE, 2018, 556 (7699) :43-+
[3]   Resonance effects on the Raman spectra of graphene superlattices [J].
Carozo, V. ;
Almeida, C. M. ;
Fragneaud, B. ;
Bede, P. M. ;
Moutinho, M. V. O. ;
Ribeiro-Soares, J. ;
Andrade, N. F. ;
Souza Filho, A. G. ;
Matos, M. J. S. ;
Wang, B. ;
Terrones, M. ;
Capaz, Rodrigo B. ;
Jorio, A. ;
Achete, C. A. ;
Cancado, L. G. .
PHYSICAL REVIEW B, 2013, 88 (08)
[4]   Doping dependence of the Raman peaks intensity of graphene close to the Dirac point [J].
Casiraghi, C. .
PHYSICAL REVIEW B, 2009, 80 (23)
[5]   Resistivity of Rotated Graphite-Graphene Contacts [J].
Chari, Tarun ;
Ribeiro-Palau, Rebeca ;
Dean, Cory R. ;
Shepard, Kenneth .
NANO LETTERS, 2016, 16 (07) :4477-4482
[6]   High-Precision Twist-Controlled Bilayer and Trilayer Graphene [J].
Chen, Xu-Dong ;
Xin, Wei ;
Jiang, Wen-Shuai ;
Liu, Zhi-Bo ;
Chen, Yongsheng ;
Tian, Jian-Guo .
ADVANCED MATERIALS, 2016, 28 (13) :2563-+
[7]   Optical Phonons in Twisted Bilayer Graphene with Gate-Induced Asymmetric Doping [J].
Chung, Ting-Fung ;
He, Rui ;
Wu, Tai-Lung ;
Chen, Yong P. .
NANO LETTERS, 2015, 15 (02) :1203-1210
[8]   Second-Order Overtone and Combination Raman Modes of Graphene Layers in the Range of 1690-2150 cm-1 [J].
Cong, Chunxiao ;
Yu, Ting ;
Saito, Riichiro ;
Dresselhaus, Gene F. ;
Dresselhaus, Mildred S. .
ACS NANO, 2011, 5 (03) :1600-1605
[9]   Graphene bilayer with a twist: Electronic structure [J].
dos Santos, J. M. B. Lopes ;
Peres, N. M. R. ;
Castro Neto, A. H. .
PHYSICAL REVIEW LETTERS, 2007, 99 (25)
[10]   Raman spectroscopy of graphene and graphite: Disorder, electron-phonon coupling, doping and nonadiabatic effects [J].
Ferrari, Andrea C. .
SOLID STATE COMMUNICATIONS, 2007, 143 (1-2) :47-57
1234