Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks

被引：167

作者：

Dingemans, G. ^{[1
]}

Beyer, W. ^{[2
]}

van de Sanden, M. C. M. ^{[1
]}

Kessels, W. M. M. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

[2] Forschungszentrum Julich, IEF 5, D-52428 Julich, Germany

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 15期

关键词：

SILICON SOLAR-CELLS; SURFACE PASSIVATION; DEPOSITION; DEFECTS; DISSOCIATION;

D O I：

10.1063/1.3497014

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The role of hydrogen in Si surface passivation is experimentally identified for Al2O3 (capping) films synthesized by atomic layer deposition. By using stacks of SiO2 and deuterated Al2O3, we demonstrate that hydrogen is transported from Al2O3 to the underlying SiO2 already at relatively low annealing temperatures of 400 degrees C. This leads to a high level of chemical passivation of the interface. Moreover, the thermal stability of the passivation up to 800 degrees C was significantly improved by applying a thin Al2O3 capping film on the SiO2. The hydrogen released from the Al2O3 film favorably influences the passivation of Si interface defects. (c) 2010 American Institute of Physics. [doi:10.1063/1.3497014]

引用

页数：3

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