Native defects and impurity band behavior in half-Heusler thermoelectric NbFeSb

被引:0
作者
Tian, Yefan [1 ]
Zhu, Hangtian [2 ]
Ren, Wuyang [2 ,3 ]
Ghassemi, Nader [1 ]
Conant, Emily [1 ]
Wang, Zhiming [3 ]
Ren, Zhifeng [2 ,4 ]
Ross, Joseph H., Jr. [1 ,5 ]
机构
[1] Texas A&M Univ, Dept Phys & Astron, College Stn, TX 77843 USA
[2] Univ Houston, Dept Phys, Houston, TX 77204 USA
[3] Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Sichuan, Peoples R China
[4] Univ Houston, Texas Ctr Superconduct, Houston, TX 77204 USA
[5] Texas A&M Univ, Dept Mat Sci & Engn, College Stn, TX 77843 USA
关键词
NMR; TRANSITION; METAL; ZRNISN; SEMICONDUCTOR; ANTIMONIDES; TRANSPORT; PHASES; IMPACT; TINISN;
D O I
10.1039/c8cp04287j
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
To investigate the electronic behavior and magnetic properties of NbFeSb, we have performed Nb-93 NMR, specific heat and magnetic measurements on NbFeSb samples heat treated at high temperatures. Magnetic measurements combined with an observed Schottky anomaly and changes in the NMR line width indicate the presence of a 0.2% concentrated native magnetic defect in stoichiometric NbFeSb samples. The origin of these native defects is believed to be due to Fe antisites on Nb sites. In addition, NMR shift and spin-lattice relaxation results below 200 K reveal a Korringa-like response indicating heavily-doped p-type behavior due to native defects. Above 280 K, this converts to an activated behavior, indicating the presence of an impurity band, empty at low temperatures, which is located around 0.03 eV above the valence band maximum.
引用
收藏
页码:21960 / 21967
页数:8
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