Universality of Short-Channel Effects in Undoped-Body Silicon Nanowire MOSFETs

被引：146

作者：

Bangsaruntip, Sarunya ^{[1
]}

Cohen, Guy M. ^{[1
]}

Majumdar, Amlan ^{[1
]}

Sleight, Jeffrey W. ^{[1
]}

机构：

[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 09期

关键词：

Fully depleted SOI (FDSOI); gate-all-around (GAA); MOSFETs; short-channel effects; silicon nanowire (NW); SCALING THEORY; DOUBLE-GATE; LENGTH;

D O I：

10.1109/LED.2010.2052231

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental data from undoped-body gate-all-around (GAA) silicon nanowire (NW) MOSFETs with different sizes demonstrate the universality of short-channel effects as a function of L-EFF/lambda, where L-EFF is the effective channel length and. is the electrostatic scaling length. Data from undoped-body single-gate extremely thin SOI (ETSOI) devices additionally show that the universality of short-channel effects is valid for any undoped-body fully depleted SOI MOSFET. Our data indicate that LEFF of undoped GAA NW MOSFETs can be scaled down by similar to 2.5 times compared with undoped single-gate ETSOI MOSFETs while maintaining equivalent short-channel control.

引用

页码：903 / 905

页数：3

共 15 条

[1] Scaling theory for cylindrical, fully-depleted, surrounding-gate MOSFET's [J].

Auth, CP ;

Plummer, JD .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (02) :74-76

[2]

Bangsaruntip S, 2009, INT EL DEVICES MEET, P272

[3] Generalized scale length for two-dimensional effects in MOSFET's [J].

Frank, DJ ;

Taur, Y ;

Wong, HSP .

IEEE ELECTRON DEVICE LETTERS, 1998, 19 (10) :385-387

[4] Silicon CMOS devices beyond scaling [J].

Haensch, W. ;

Nowak, E. J. ;

Dennard, R. H. ;

Solomon, P. M. ;

Bryant, A. ;

Dokumaci, O. H. ;

Kumar, A. ;

Wang, X. ;

Johnson, J. B. ;

Fischetti, M. V. .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 2006, 50 (4-5) :339-361

[5]

Kim D-W., 2008, P IEEE SOI C, P117

[6]

LIN CH, 2007, THESIS U CALIFORNIA

[7] Undoped-Body Extremely Thin SOI MOSFETs With Back Gates [J].

Majumdar, Amlan ;

Ren, Zhibin ;

Koester, Steven J. ;

Haensch, Wilfried .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (10) :2270-2276

[8] Gate Length and Performance Scaling of Undoped-Body Extremely Thin SOI MOSFETs [J].

Majumdar, Amlan ;

Wang, Xinlin ;

Kumar, Arvind ;

Holt, Judson R. ;

Dobuzinsky, David ;

Venigalla, Raj ;

Ouyang, Christine ;

Koester, Steven J. ;

Haensch, Wilfried .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (04) :413-415

[9] Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs [J].

Oh, SH ;

Monroe, D ;

Hergenrother, JM .

IEEE ELECTRON DEVICE LETTERS, 2000, 21 (09) :445-447

[10]

Suk SD, 2005, INT EL DEVICES MEET, P735

← 1 2 →