Silicon-on-insulator thin films grown by liquid phase epitaxy

被引:1
作者
Jozwik, I [1 ]
Olchowik, JM [1 ]
Kraiem, J [1 ]
Fave, A [1 ]
机构
[1] Tech Univ Lublin, Inst Phys, PL-20618 Lublin, Poland
来源
Nanostructured and Advanced Materials for Applications in Sensor, Optoelectronic and Photovoltaic Technology | 2005年 / 204卷
关键词
D O I
10.1007/1-4020-3562-4_31
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:347 / 350
页数:4
相关论文
共 4 条
[1]   DEFECT-FREE EPITAXIAL LATERAL OVERGROWTH OF OXIDIZED (111)SI BY LIQUID-PHASE EPITAXY [J].
BERGMANN, R ;
BAUSER, E ;
WERNER, JH .
APPLIED PHYSICS LETTERS, 1990, 57 (04) :351-353
[2]  
Jozwik I., 2004, Molecular Physics Reports, V39, P85
[3]   A review of thin-film crystalline silicon for solar cell applications. Part 1: Native substrates [J].
McCann, MJ ;
Catchpole, KR ;
Weber, KJ ;
Blakers, AW .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2001, 68 (02) :135-171
[4]   High-quality crystalline silicon layer grown by liquid phase epitaxy method at low growth temperature [J].
Ujihara, T ;
Obara, K ;
Usami, N ;
Fujiwara, K ;
Sazaki, G ;
Shishido, T ;
Nakajima, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (3A) :L217-L219