The optical and electrical properties of ZnO:Al thin films deposited at low temperatures by RF magnetron sputtering

被引：25
作者：
Tang, Ping [1 ,2 ]
Li, Bing [2 ]
Feng, Lianghuan [2 ]
机构：
[1] Chinese Acad Sci, Inst Opt & Elect, State Key Lab Opt Technol Nanofabricat & Microeng, POB 350, Chengdu 610209, Sichuan, Peoples R China
[2] Sichuan Univ, Coll Mat Sci & Engn, Chengdu 610064, Sichuan, Peoples R China
来源：
CERAMICS INTERNATIONAL | 2018年 / 44卷 / 04期
关键词：
ZnO:Al films; Magnetron sputtering; Low substrate temperatures; PULSED-LASER DEPOSITION; SURFACE; GLASS;
D O I：
10.1016/j.ceramint.2017.11.216
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Several ZnO:Al thin films have been successfully deposited on glass substrates at different substrate temperatures by RF (radio frequency) magnetron sputtering method. Effects of the substrate temperatures on the optical and electrical properties of these ZnO:Al thin films were investigated. The UV-VIS-NIR spectra of the ZnO:Al thin films revealed that the average optical transmittances in the visible range are very high, up to 88%. X-ray diffraction results showed that crystallization of these films was improved at higher substrate temperature. The band gaps of ZnO:Al thin films deposited at 25 degrees C, 150 degrees C, 200 degrees C, and 250 degrees C are 3.59 eV, 3.55 eV, 3.53 eV, and 3.48 eV, respectively. The Hall-effect measurement demonstrated that the electrical resistivity of the films decreased with the increase of the substrate temperature and the electrical resistivity reached 1.990 x 10(-3) Omega cm at 250 degrees C.
引用
收藏
页码：4154 / 4157
页数：4
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