Investigation of two-branch boron diffusion from vapor phase in n-type 4H-SiC

被引：7

作者：

Bolotnikov, A. V. ^{[1
]}

Muzykov, P. G. ^{[1
]}

Sudarshan, T. S. ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 05期

关键词：

D O I：

10.1063/1.2968306

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Boron diffusion from gas phase was implemented for p-type doping of 4H-SiC at temperatures in the range of 1800-2000 degrees C. A two-branch diffusion associated with two different diffusion mechanisms was observed. The activation energy E-a and prefactor D-0 were calculated for each diffusion branch, that are E-a = 7.258 eV/D-0 = 1.931 x 10(6) cm(2)/s and E-a = 8.742 eV/D-0 = 2.126 x 10(7) cm(2)/s for fast and slow diffusion, respectively. It has been confirmed that the surface layer of diffused boron mostly consists of shallow boron acceptors, while the tail of diffusion profile has mostly deep level D centers. (C) 2008 American Institute of Physics.

引用

页数：3

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