Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices

被引:195
|
作者
Wang, Hong [1 ,2 ]
Du, Yuanmin [3 ]
Li, Yingtao [1 ]
Zhu, Bowen [1 ]
Leow, Wan Ru [1 ]
Li, Yuangang [4 ]
Pan, Jisheng [5 ]
Wu, Tao [3 ]
Chen, Xiaodong [1 ]
机构
[1] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
[2] Xidian Univ, Sch Adv Mat & Nanotechnol, Key Lab Wide Band Gap, Semicond Technol, Xian 710071, Peoples R China
[3] King Abdullah Univ Sci & Technol, Solar & Photovolta Engn Res Ctr, Thuwal 239556900, Saudi Arabia
[4] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Peoples R China
[5] Inst Mat Res & Engn, Mat Ctr Innovat, Singapore 117602, Singapore
基金
新加坡国家研究基金会;
关键词
electronic devices; memory; proteins; resistive switching; threshold; THIN-FILM TRANSISTORS; SILK FIBROIN; ELECTRON-TRANSPORT; OXIDE; RESISTANCE; FABRICATION; GRAPHENE; INTERLAYERS; CONVERSION; MONOLAYER;
D O I
10.1002/adfm.201501389
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The employ of natural biomaterials as the basic building blocks of electronic devices is of growing interest for biocompatible and green electronics. Here, resistive switching (RS) devices based on naturally silk protein with configurable functionality are demonstrated. The RS type of the devices can be effectively and exactly controlled by controlling the compliance current in the set process. Memory RS can be triggered by a higher compliance current, while threshold RS can be triggered by a lower compliance current. Furthermore, two types of memory devices, working in random access and WORM modes, can be achieved with the RS effect. The results suggest that silk protein possesses the potential for sustainable electronics and data storage. In addition, this finding would provide important guidelines for the performance optimization of biomaterials based memory devices and the study of the underlying mechanism behind the RS effect arising from biomaterials.
引用
收藏
页码:3825 / 3831
页数:7
相关论文
共 50 条
  • [1] Advances in Protein-Based Resistive Switching Memory: Fundamentals, Challenges, and Applications
    Banik, Hritinava
    Sarkar, Surajit
    Deb, Rahul
    Bhattacharjee, Debajyoti
    Hussain, Syed Arshad
    ACS APPLIED ELECTRONIC MATERIALS, 2025, 7 (06) : 2208 - 2232
  • [2] Convertible resistive switching characteristics between memory switching and threshold switching in a single ferritin-based memristor
    Zhang, Chaochao
    Shang, Jie
    Xue, Wuhong
    Tan, Hongwei
    Pan, Liang
    Yang, Xi
    Guo, Shanshan
    Hao, Jian
    Liu, Gang
    Li, Run-Wei
    CHEMICAL COMMUNICATIONS, 2016, 52 (26) : 4828 - 4831
  • [3] Resistive Switching Memory Devices Based on Proteins
    Wang, Hong
    Meng, Fanben
    Zhu, Bowen
    Leow, Wan Ru
    Liu, Yaqing
    Chen, Xiaodong
    ADVANCED MATERIALS, 2015, 27 (46) : 7670 - 7676
  • [4] Advances in resistive switching based memory devices
    Munjal, Sandeep
    Khare, Neeraj
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 52 (43)
  • [5] Resistive Switching Memory Devices Based on Proteins
    Wang, Hong
    Meng, Fanben
    Zhu, Bowen
    Leow, Wan Ru
    Liu, Yaqing
    Chen, Xiaodong
    Advanced Materials, 2015, : 7670 - 7676
  • [6] Hybrid memory characteristics of NbOx threshold switching devices
    Lee, Sangmin
    Hwang, Hyunsang
    Woo, Jiyong
    APPLIED PHYSICS LETTERS, 2021, 119 (09)
  • [7] Bipolar resistive switching characteristics in tantalum nitride-based resistive random access memory devices
    Kim, Myung Ju
    Jeon, Dong Su
    Park, Ju Hyun
    Kim, Tae Geun
    APPLIED PHYSICS LETTERS, 2015, 106 (20)
  • [8] Gd doping improved resistive switching characteristics of TiO2-based resistive memory devices
    Liu, Li-Feng
    Kang, Jin-Feng
    Xu, Nuo
    Sun, Xiao
    Chen, Chen
    Sun, Bing
    Wang, Yi
    Liu, Xiao-Yan
    Zhang, Xing
    Han, Ru-Qi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) : 2701 - 2703
  • [9] Gd doping improved resistive switching characteristics of TiO2 -based resistive memory devices
    Liu, Li-Feng
    Kang, Jin-Feng
    Xu, Nuo
    Sun, Xiao
    Chen, Chen
    Sun, Bing
    Wang, Yi
    Liu, Xiao-Yan
    Zhang, Xing
    Han, Ru-Qi
    Japanese Journal of Applied Physics, 2008, 47 (4 PART 2): : 2701 - 2703
  • [10] Resistive switching characteristics and mechanisms in silicon oxide memory devices
    Chang, Yao-Feng
    Fowler, Burt
    Chen, Ying-Chen
    Zhou, Fei
    Wu, Xiaohan
    Chen, Yen-Ting
    Wang, Yanzhen
    Xue, Fei
    Lee, Jack C.
    PHYSICAL SCIENCES REVIEWS, 2016, 1 (05)