Efficient spin relaxation in InGaN/GaN and InGaN/GaMnN quantum wells: An obstacle to spin detection

被引：14

作者：

Chen, WM ^{[1
]}

Buyanova, IA

Nishibayashi, K

Kayanuma, K

Seo, K

Murayama, A

Oka, Y

Thaler, G

Frazier, R

Abernathy, CR

Ren, F

Pearton, SJ

Pan, CC

Chen, GT

Chyi, JI

机构：

[1] Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden

[2] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Sendai, Miyagi 9808577, Japan

[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[4] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 19期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2125125

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transient magneto-optical spectroscopy of InGaN/GaN and InGaN/GaMnN quantum wells reveals a spin relaxation process with a characteristic time of 50 ps. We show that the observed spin relaxation is mediated by spin flips of individual carriers rather than by direct exciton spin flips, and is proposed to occur near the bottom of the exciton band (K=0). Nearly complete thermalization between spin sublevels of the excitons, observed immediately after the pulsed photoexcitation, is attributed to even faster spin relaxation of photogenerated hot carriers/excitons accompanying momentum and energy relaxation at high K vectors. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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