GaSb quantum rings grown by metal organic molecular beam epitaxy

被引：1

作者：

Odashima, S. ^{[1
,2
]}

Sakurai, S. ^{[1
]}

Wada, M. ^{[1
]}

Suemune, I. ^{[1
]}

机构：

[1] Hokkaido Univ, RIES, Sapporo, Hokkaido 0010021, Japan

[2] Hokkaido Univ, GCOE, Sapporo, Hokkaido 0600814, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 323卷 / 01期

关键词：

Quantum ring; MOMBE; Gallium antimony; NANOSTRUCTURES;

D O I：

10.1016/j.jcrysgro.2011.01.032

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaSb quantum rings (QRs) of different sizes and shapes were grown by metal organic molecular beam epitaxy (MOMBE). Partially capped InAs quantum dots (QDs) grown on a GaAs buffer layer were flattened by In-flushing, followed by regrowth of GaSb which forms ring structure around the InAs seed dots. With the assistance of such an InAs/GaAs groundwork layer, the GaSb QRs exhibit a better defined shape compared to the spontaneously formed rings. First, rims of QRs develop around the boundary of the InAs/GaAs, then additional GaSb QDs grow on top of them preferentially along the [0 - 1 1] direction compared to [0 1 1]. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：233 / 235

页数：3

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