Failure Mechanism for Fine Pitch Microbump in Cu/Sn/Cu System During Current Stressing

被引：10

作者：

Hsiao, Hsiang-Yao ^{[1
]}

Trigg, Alastair David ^{[1
]}

Chai, Tai Chong ^{[1
]}

机构：

[1] Agcy Sci Technol & Res, Inst Microelect, Singapore 117685, Singapore

来源：

IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY | 2015年 / 5卷 / 03期

关键词：

Cu pillar; microbump; electromigration; intermetallic compound; ELECTROMIGRATION RELIABILITY; SOLDER BUMPS;

D O I：

10.1109/TCPMT.2015.2398416

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Current-induced failures in fine pitch Sn microbump with Cu pillar have been investigated under a current density of 3.2 x 10(4) A/cm(2) and temperature of 150 degrees C. This process takes place in 2000 h of electromigration test. From the focused ion beam image and energy dispersive X-ray analysis, we observed the intermetallic compound formation, Kirkendall effect, and crack contributed to this failure. There are two stages of failure process for Cu pillar with microbump during current stressing. In the first stage, the whole Sn solder was transformed into intermetallic compound and Kirkendall voids were formed at the interface between the Cu pillar and Cu3Sn intermetallic compound. In the second stage, the Kirkendall voids coalesced into larger porosities then formed continual crack by current stressing, leading more bump resistance increase.

引用

页码：314 / 319

页数：6

共 17 条

[1]

BRANDENBURG S, 1998, P SURF MOUNT INT C E, P337

[2] Abnormal contact resistance reduction of bonded copper interconnects in three-dimensional integration during current stressing [J].

Chen, KN ;

Tan, CS ;

Fan, A ;

Reif, R .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :011903-1

[3] Effect of contact metallization on electromigration reliability of Pb-free solder joints [J].

Ding, Min ;

Wang, Guotao ;

Chao, Brook ;

Ho, Paul S. ;

Su, Peng ;

Uehling, Trent .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (09)

[4]

Ebersberger B, 2005, ELEC COMP C, P1407

[5] Cu pillar bumps as a lead-free drop-in replacement for solder-bumped, flip-chip interconnects [J].

Ebersberger, Bernd ;

Lee, Charles .

58TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, PROCEEDINGS, 2008, :59-+

[6]

Huang Z, 2008, ELEC COMP C, P12

[7]

Lable R, 2008, IEEE INT INTERC TECH, P19

[8] Electromigration reliability and morphologies of Cu pillar flip-chip solder joints with Cu substrate pad metallization [J].

Lai, Yi-Shao ;

Chiu, Ying-Ta ;

Chen, Jiunn .

JOURNAL OF ELECTRONIC MATERIALS, 2008, 37 (10) :1624-1630

[9] Electromigration of Sn-37Pb and Sn-3Ag-1.5Cu/Sn-3Ag-0.5Cu composite flip-chip solder bumps with Ti/Ni(V)/Cu under bump metallurgy [J].

Lai, Yi-Shao ;

Chen, Kuo-Ming ;

Kao, Chin-Li ;

Lee, Chiu-Wen ;

Chiu, Ying-Ta .

MICROELECTRONICS RELIABILITY, 2007, 47 (08) :1273-1279

[10]

Lin YM, 2011, ELEC COMP C, P351, DOI 10.1109/ECTC.2011.5898537

← 1 2 →