Range parameters of 18O implanted into Si and SiO2

被引：3

作者：

de Souza, JP ^{[1
]}

Behar, M ^{[1
]}

Dias, JF ^{[1
]}

dos Santos, JHR ^{[1
]}

机构：

[1] UFRGS, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2001年 / 175卷

关键词：

ranges; stopping power;

D O I：

10.1016/S0168-583X(00)00525-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In the present contribution, we present range parameter results for O-18 implanted into Si and SiO2 targets in a 25-200 keV energy interval. The O-18 depth profiles were determined by using the O-18(p, alpha)N-15 nuclear resonant reaction at E-r = 151.2 keV. As a result, we have obtained the O-18 projected range (R-p) and range straggling (DeltaR(p)) for each one of the implantation energies. The experimental data were compared with the TRIM predictions. Concerning O-18 projected ranges in Si, the theoretical experimental agreement was fairly good, whereas, for the SiO2 case, it was much poorer. However, large differences were found, for both cases, when the DeltaR(p) experimental values were compared with the theoretical ones. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：46 / 50

页数：5

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