Solution growth and low-temperature thermoelectric properties of single crystalline β-FeSi2

被引：0

作者：

Udono, H. ^{[1
]}

Suzuki, H. ^{[1
]}

Goto, K. ^{[1
]}

Mashiko, S. ^{[1
]}

Uchikoshi, M. ^{[2
]}

Issiki, M. ^{[2
]}

机构：

[1] Ibaraki Univ, Coll Engn, 4-12-1 Nakanarusawa, Hitachi, Ibaraki 3168511, Japan

[2] Tohoku Univ, IMRAM, Sendai, Miyagi 980, Japan

来源：

PROCEEDINGS ICT 07: TWENTY-SIXTH INTERNATIONAL CONFERENCE ON THERMOELECTRICS | 2008年

基金：

日本学术振兴会;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have measured the Seebeck coefficient and power factor of single crystalline beta-FeSi2 grown by a temperature gradient solution growth (TGSG) method using Ga and Zn solvent. Typical resistivity and carrier density at 300K were 0.03 Omega cm and 2 x 10(19) cm(-3) for p-type and 0.2 Omega cm and 5 x 10(18) cm(-3) for n-type crystals, respectively. The Seebeck coefficient measured along [011] direction was approximately 350 mu V/K(p-type) and -700 mu V/K(n-type) at 300K and showed a maximum value of 500 mu V/K(p-type, T=similar to 25K) and 2100 mu V/K(n-type, T=similar to 70K). The maximum power factor was 4.2 x 10(-6) Wcm(-1)K(-2) (p-type, T=170K) and 23 x 10(-6) Wcm(-1)K(-2) (n-type, T=100K). The value was more than one order of magnitude larger than that of previously reported.

引用

页码：245 / 248

页数：4

共 13 条

[1] Borisenko V.E., 2000, SEMICONDUCTING SILIC, P40
[2] Electrical properties of Co-doped β-FeSi2 crystals
Brehme, S
Behr, G
Heinrich, A
[J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (07) : 3798 - 3803
[3] GOTOH K, 2007, THIN SOLID IN PRESS
[4] THERMOELECTRIC GENERATORS MADE OF FESI2 AND HMS - FABRICATION AND MEASUREMENT
GROSS, E
RIFFEL, M
STOHRER, U
[J]. JOURNAL OF MATERIALS RESEARCH, 1995, 10 (01) : 34 - 40
[5] Thermoelectric properties of β-FeSi2 single crystals and polycrystalline β-FeSi2+x thin films
Heinrich, A
Griessmann, H
Behr, G
Ivanenko, K
Schumann, J
Vinzelberg, H
[J]. THIN SOLID FILMS, 2001, 381 (02) : 287 - 295
[6] KIMURA S, 1990, J MAT SCI SOC JAPAN, V27, P226
[7] KOJIMA T, 1984, P 5 INT C THERM EN C, P56
[8] Thermoelectric properties of solution grown β-FeSi2 single crystals
Suzuki, Hirokazu
Udono, Haruhiko
Kikuma, Isao
[J]. MATERIALS TRANSACTIONS, 2006, 47 (06) : 1428 - 1431
[9] Anisotropic Seebeck coefficient in β-FeSi2 single crystal
Takeda, M
Kuramitsu, M
Yoshio, M
[J]. THIN SOLID FILMS, 2004, 461 (01) : 179 - 181
[10] Etch pits observation and etching properties of β-FeSi2
Udono, H
Kikuma, I
[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2003, 6 (5-6) : 413 - 416

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