Electric field effects in photoreflectance spectra of ZnSe epilayers grown on GaAs by molecular beam epitaxy

被引：5

作者：

Constantino, ME ^{[1
]}

Salazar-Hernández, B ^{[1
]}

机构：

[1] Univ Autonoma Estado Morelos, Fac Ciencias Quim & Ingn, Ctr Invest Ingn & Ciencias Aplicadas, Cuernavaca 62210, Morelos, Mexico

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2004年 / 37卷 / 01期

关键词：

D O I：

10.1088/0022-3727/37/1/015

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoreflectance (PR) is used to investigate the internal electric field of a series of ZnSe/GaAs heterostructures having different layer thicknesses. The room and low temperature PR spectra exhibited Franz-Keldysh oscillations at energies above the ZnSe band gap. From the period of these oscillations, the electric field at the ZnSe/GaAs interface was determined and behaviour decreasing with temperature was observed. The calculated values for the electric field (10-50 kV cm(-1)) are in agreement with the typical values in semiconductors. The dependence of the electric field on the layer thickness is attributed to the presence of additional states introduced by the misfit dislocations that are formed to relieve the epilayer strain.

引用

页码：93 / 97

页数：5

共 15 条

[1] THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE [J].