Ferroelectric Polarization-Switching Dynamics and Wake-Up Effect in Si-Doped HfO2

被引：104

作者：

Lee, Tae Yoon ^{[1
]}

Lee, Kyoungjun ^{[1
]}

Lim, Hong Heon ^{[1
]}

Song, Myeong Seop ^{[1
]}

Yang, Sang Mo ^{[3
]}

Yoo, Hyang Keun ^{[4
]}

Suh, Dong Ik ^{[4
]}

Zhu, Zhongwei ^{[5
]}

Yoon, Alexander ^{[5
]}

MacDonald, Matthew R. ^{[6
]}

Lei, Xinjian ^{[6
]}

Jeong, Hu Young ^{[7
]}

Lee, Donghoon ^{[2
,8
]}

Park, Kunwoo ^{[2
,8
]}

Park, Jungwon ^{[2
,8
]}

Chae, Seung Chul ^{[1
]}

机构：

[1] Seoul Natl Univ, Inst Chem Proc, Dept Phys Educ, Seoul 08826, South Korea

[2] Seoul Natl Univ, Inst Chem Proc, Sch Chem & Biol Engn, Seoul 08826, South Korea

[3] Sookmyung Womens Univ, Dept Phys, Seoul 04310, South Korea

[4] SK Hynix Inc, Icheon Si 17336, Gyeonggi Do, South Korea

[5] Lam Res Corp, Fremont, CA 94538 USA

[6] Versum Mat Inc, Carlsbad, CA 92011 USA

[7] UNIST, Cent Res Facil UCRF, Ulsan 44919, South Korea

[8] Inst for Basic Sci Korea, Ctr Nanoparticle Res, Seoul 08826, South Korea

来源：

ACS APPLIED MATERIALS & INTERFACES | 2019年 / 11卷 / 03期

基金：

新加坡国家研究基金会;

关键词：

ferroelectricity; HfO2; FeRAM; defects; thin films; domain switching; HAFNIUM OXIDE; NEGATIVE CAPACITANCE; BEHAVIOR; KINETICS; IMPACT; PHASE;

D O I：

10.1021/acsami.8b11681

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The ferroelectricity in ultrathin HfO2 offers a viable alternative to ferroelectric memory. A reliable switching behavior is required for commercial applications; however, many intriguing features of this material have not been resolved. Herein, we report an increase in the remnant polarization after electric field cycling, known as the "wake-up" effect, in terms of the change in the polarization-switching dynamics of a Si-doped HfO2 thin film. Compared with a pristine specimen, the Si-doped HfO2 thin film exhibited a partial increase in polarization after a finite number of ferroelectric switching behaviors. The polarization-switching behavior was analyzed using the nucleation-limited switching model characterized by a Lorentzian distribution of logarithmic domain-switching times. The polarization switching was simulated using the Monte Carlo method with respect to the effect of defects. Comparing the experimental results with the simulations revealed that the wake-up effect in the HfO2 thin film is accompanied by the suppression of disorder.

引用

页码：3142 / 3149

页数：8

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