Chemical vapor deposition of 2D materials: A review of modeling, simulation, and machine learning studies

被引:80
作者
Bhowmik, Sayan [1 ]
Rajan, Ananth Govind [1 ]
机构
[1] Indian Inst Sci, Dept Chem Engn, Bengaluru 560012, Karnataka, India
关键词
HEXAGONAL BORON-NITRIDE; TRANSITION-METAL DICHALCOGENIDES; MOLECULAR-DYNAMICS SIMULATION; GRAPHENE GROWTH; CARBON NANOTUBES; CVD SYNTHESIS; LARGE-AREA; FEW-LAYER; ATOMISTIC INSIGHTS; VERTICAL GROWTH;
D O I
10.1016/j.isci.2022.103832
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Chemical vapor deposition (CVD) is extensively used to produce large-area twodimensional (2D) materials. Current research is aimed at understanding mechanisms underlying the nucleation and growth of various 2D materials, such as graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenides (e.g., MoS2/WSe2). Herein, we survey the vast literature regarding modeling and simulation of the CVD growth of 2D materials and their heterostructures. We also focus on newer materials, such as silicene, phosphorene, and borophene. We discuss how density functional theory, kinetic Monte Carlo, and reactive molecular dynamics simulations can shed light on the thermodynamics and kinetics of vapor-phase synthesis. We explain how machine learning can be used to develop insights into growth mechanisms and outcomes, as well as outline the open knowledge gaps in the literature. Our work provides consolidated theoretical insights into the CVD growth of 2D materials and presents opportunities for further understanding and improving such processes
引用
收藏
页数:32
相关论文
共 174 条
[1]   Growth of Monolayer and Multilayer MoS2 Films by Selection of Growth Mode: Two Pathways via Chemisorption and Physisorption of an Inorganic Molecular Precursor [J].
Ahn, Chaehyeon ;
Park, Younghee ;
Shin, Seunghyun ;
Ahn, Jong-Guk ;
Song, Intek ;
An, Youngjoon ;
Jung, Jaehoon ;
Kim, Chung Soo ;
Kim, Jee Hyeon ;
Bang, Jiwon ;
Kim, Daehyun ;
Baik, Jaeyoon ;
Lim, Hyunseob .
ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (05) :6805-6812
[2]  
Allendorf MD, 1996, MATER RES SOC SYMP P, V410, P459
[3]   Ab Initio Thermodynamics of Hydrocarbons Relevant to Graphene Growth at Solid and Liquid Cu Surfaces [J].
Andersen, Mie ;
Cingolani, Juan Santiago ;
Reuter, Karsten .
JOURNAL OF PHYSICAL CHEMISTRY C, 2019, 123 (36) :22299-22310
[4]   A critical review on the contributions of chemical and physical factors toward the nucleation and growth of large-area graphene [J].
Ani, M. H. ;
Kamarudin, M. A. ;
Ramlan, A. H. ;
Ismail, E. ;
Sirat, M. S. ;
Mohamed, M. A. ;
Azam, M. A. .
JOURNAL OF MATERIALS SCIENCE, 2018, 53 (10) :7095-7111
[5]  
[Anonymous], 2018, NPJ 2D MATER APPL, DOI DOI 10.1038/S41699-018-0072-4
[6]   Breaking of Symmetry in Graphene Growth on Metal Substrates [J].
Artyukhov, Vasilii I. ;
Hao, Yufeng ;
Ruoff, Rodney S. ;
Yakobson, Boris I. .
PHYSICAL REVIEW LETTERS, 2015, 114 (11)
[7]   Equilibrium at the edge and atomistic mechanisms of graphene growth [J].
Artyukhov, Vasilii I. ;
Liu, Yuanyue ;
Yakobson, Boris I. .
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2012, 109 (38) :15136-15140
[8]   Graphene applications in electronics and photonics [J].
Avouris, Phaedon ;
Xia, Fengnian .
MRS BULLETIN, 2012, 37 (12) :1225-1234
[9]   Role of Kinetic Factors in Chemical Vapor Deposition Synthesis of Uniform Large Area Graphene Using Copper Catalyst [J].
Bhaviripudi, Sreekar ;
Jia, Xiaoting ;
Dresselhaus, Mildred S. ;
Kong, Jing .
NANO LETTERS, 2010, 10 (10) :4128-4133
[10]   Diffusion-Mediated Synthesis of MoS2/WS2 Lateral Heterostructures [J].
Bogaert, Kevin ;
Liu, Song ;
Chesin, Jordan ;
Titow, Denis ;
Gradecak, Silvija ;
Garaj, Slaven .
NANO LETTERS, 2016, 16 (08) :5129-5134