Temperature and Magnetic Field Effects on the Transport Controlled Charge State of a Single Quantum Dot

被引：5
作者：
Larsson, L. A. [1 ]
Larsson, M. [1 ]
Moskalenko, E. S. [2 ]
Holtz, P. O. [1 ]
机构：
[1] Linkoping Univ, IFM, S-58183 Linkoping, Sweden
[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
NANOSCALE RESEARCH LETTERS | 2010年 / 5卷 / 07期
基金：
瑞典研究理事会;
关键词：
Quantum dot; Wetting layer; Magnetic field; Temperature dependence; Charge state; CARRIER DYNAMICS; INGAAS; EMISSION; EXCITONS; GAAS;
D O I：
10.1007/s11671-010-9618-x
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Individual InAs/GaAs quantum dots are studied by micro-photoluminescence. By varying the strength of an applied external magnetic field and/or the temperature, it is demonstrated that the charge state of a single quantum dot can be tuned. This tuning effect is shown to be related to the in-plane electron and hole transport, prior to capture into the quantum dot, since the photo-excited carriers are primarily generated in the barrier.
引用
收藏
页码：1150 / 1155
页数：6
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