Temperature and Magnetic Field Effects on the Transport Controlled Charge State of a Single Quantum Dot

被引：5

作者：

Larsson, L. A. ^{[1
]}

Larsson, M. ^{[1
]}

Moskalenko, E. S. ^{[2
]}

Holtz, P. O. ^{[1
]}

机构：

[1] Linkoping Univ, IFM, S-58183 Linkoping, Sweden

[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

NANOSCALE RESEARCH LETTERS | 2010年 / 5卷 / 07期

基金：

瑞典研究理事会;

关键词：

Quantum dot; Wetting layer; Magnetic field; Temperature dependence; Charge state; CARRIER DYNAMICS; INGAAS; EMISSION; EXCITONS; GAAS;

D O I：

10.1007/s11671-010-9618-x

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Individual InAs/GaAs quantum dots are studied by micro-photoluminescence. By varying the strength of an applied external magnetic field and/or the temperature, it is demonstrated that the charge state of a single quantum dot can be tuned. This tuning effect is shown to be related to the in-plane electron and hole transport, prior to capture into the quantum dot, since the photo-excited carriers are primarily generated in the barrier.

引用

页码：1150 / 1155

页数：6

共 25 条

[1]

Adachi S., 1994, GaAs and Related Materials

[2]

Ashcroft N., 2011, Solid State Physics

[3]

Boer K.W., 2002, SURVEY SEMICONDUCTOR, VI

[4]

Borovitskaya E., 2002, QUANTUM DOTS