Depth-selective structural analysis of thin films using total-external-reflection x-ray diffraction

被引：0
|
作者：
Kawamura, Tomoaki [1 ]
Omi, Hiroo [2 ]
机构：
[1] Nichia Corp, Yokohama Technol Ctr, Kanagawa 2210022, Japan
[2] NTT Corp, NTT Basic Res Lab, Atsugi, Kanagawa 2430198, Japan
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2010年 / 22卷 / 47期
关键词：
GRAZING-INCIDENCE DIFFRACTION; BRAGG-DIFFRACTION; DYNAMICAL THEORY; CRYSTAL-SURFACE; STRAIN; LAYER; MULTILAYERS; RELAXATION; SCATTERING; RADIATION;
D O I：
10.1088/0953-8984/22/47/474009
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Total-external-reflection (TER) x-ray diffraction is the depth-sensitive technique for evaluating layered structures, including epitaxial heterostructures, ion-doped bulk crystals and several quantum-well structures. This technique can control the depth of observation by changing both incident and exit angles of x-rays from the surface. In this review, the principle of the TER technique and measurement apparatus are briefly described, and applications of layered-semiconductor samples evaluated using the TER technique are introduced.
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页数：12
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