Highly efficient wideband X-band MMIC class-F power amplifier with cascode FP GaN HEMT

被引：13

作者：

Kang, J. ^{[1
]}

Moon, J. -S. ^{[1
]}

机构：

[1] HRL Labs LLC, 3011 Malibu Canyon Rd, Malibu, CA 90265 USA

来源：

ELECTRONICS LETTERS | 2017年 / 53卷 / 17期

关键词：

MMIC power amplifiers; HEMT integrated circuits; aluminium compounds; gallium compounds; wide band gap semiconductors; III-V semiconductors; semiconductor device breakdown; millimetre wave power amplifiers; microwave field effect transistors; millimetre wave field effect transistors; field effect MMIC; wideband amplifiers; integrated circuit testing; frequency; 58; GHz; size; 0; 14; mum; voltage; 44; V; power; 9; 2; W; 10; on-wafer test; high-voltage operating cascode devices; high breakdown field-plate high-electron-mobility transistor devices; voltage swing; minimised device size; minimised output capacitance impact; high-power class-F operation; wideband high-power single-chip X-band MMIC class-F power amplifier; cascode FP HEMT; AlGaN-GaN; efficiency; 50; percent; 1; 6; DUAL-GATE;

D O I：

10.1049/el.2017.1672

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Wideband high-power single-chip X-band class-F power amplifier with excellent output performances is reported. In order to achieve high-power class-F operation under minimised output capacitance impact at the frequency, high-voltage operation with minimised device size is pursued and its voltage swing becomes maximised by adopting high breakdown field-plate (FP) GaN high-electron-mobility transistor (HEMT) devices with cascode configuration. For the fabrication, 0.14 mu m FP AlGaN/GaN HEMT technology with 58 GHz f(T) and approximate to 100 V breakdown is used. Based on on-wafer test at 44 V Vdd, the fabricated class-F power amplifier delivers maximum 61.1% power added efficiency (PAE) with 9.2 W at 10.2 GHz. With the help of high-voltage operating cascode devices of minimised size, it also delivers excellent bandwidth of 1.6 GHz at the point of 50% PAE and high-power density of 4.42 W/mm is demonstrated.

引用

页码：1207 / 1209

页数：2

共 10 条

[1] COMPARISONS OF MICROWAVE PERFORMANCE BETWEEN SINGLE-GATE AND DUAL-GATE MODFETS [J].

CHEN, YK ;

WANG, GW ;

RADULESCU, DC ;

EASTMAN, LF .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (02) :59-61

[2] Cascode connected AlGaN/GaN HEMT's on SiC substrates [J].

Green, BM ;

Chu, KK ;

Smart, JA ;

Tilak, V ;

Kim, H ;

Shealy, JR ;

Eastman, LF .

IEEE MICROWAVE AND GUIDED WAVE LETTERS, 2000, 10 (08) :316-318

[3]

Kee S. D., 2003, T MTT, V63, P2703

[4] Analysis of a fully matched saturated Doherty amplifier with excellent efficiency [J].

Kim, Jangheon ;

Moon, Junghwan ;

Woo, Young Yuri ;

Hong, Sungchul ;

Kim, Ildu ;

Kim, Jungjoon ;

Kim, Bumman .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2008, 56 (02) :328-338

[5]

Kobayashi H, 2001, IEEE MTT-S, P939, DOI 10.1109/MWSYM.2001.967047

[6]

Majuntke V, 2013, INT CONF PERVAS COMP, P11, DOI 10.1109/PerCom.2013.6526709

[7] >70% Power-Added-Efficiency Dual-Gate, Cascode GaN HEMTs Without Harmonic Tuning [J].

Moon, J. S. ;

Grabar, R. ;

Brown, D. ;

Alvarado-Rodriguez, I. ;

Wong, D. ;

Schmitz, A. ;

Fung, H. ;

Chen, P. ;

Kang, J. -C. ;

Kim, S. ;

Oh, T. ;

Mcguire, C. .

IEEE ELECTRON DEVICE LETTERS, 2016, 37 (03) :272-275

[8]

Moon J. S., 2012, 2012 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR), P9, DOI 10.1109/PAWR.2012.6174909

[9] Behaviors of Class-F and Class-F-1 Amplifiers [J].

Moon, Junghwan ;

Jee, Seunghoon ;

Kim, Jungjoon ;

Kim, Jangheon ;

Kim, Bumman .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2012, 60 (06) :1937-1951

[10] Analysis and experiments for high-efficiency class-F and inverse class-F power amplifiers [J].

Woo, Young Yun ;

Yang, Youngoo ;

Kim, Bumman .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2006, 54 (05) :1969-1974

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