Pressure-induced transformations and superconductivity of amorphous germanium

被引：34

作者：

Barkalov, O. I. ^{[1
]}

Tissen, V. G. ^{[1
]}

McMillan, P. F. ^{[2
,3
]}

Wilson, M. ^{[4
]}

Sella, A. ^{[2
,3
]}

Nefedova, M. V. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Russia

[2] UCL, Dept Chem, London WC1H 0AJ, England

[3] UCL, Mat Chem Ctr, Christopher Ingold Labs, London WC1H 0AJ, England

[4] Univ Oxford, Phys & Theoret Chem Lab, Oxford, England

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

PHASE-TRANSITION; CRYSTAL-STRUCTURES; RAMAN PHONONS; GE; SI; SILICON; TEMPERATURE; DYNAMICS; DEPENDENCE; SIMULATION;

D O I：

10.1103/PhysRevB.82.020507

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of pressure on amorphous Ge was probed by Raman spectroscopy combined with molecular-dynamics simulations. A large jump occurs in the principal peak position due to nearest-neighbor Ge-Ge vibrations at 11-12 GPa and 7-5.5 GPa, respectively, during increasing/decreasing pressure due to a polyamorphic transition occurring between the low-density amorphous semiconductor and a metallic high-density polyamorph (HDA). We measured the superconducting transition temperature (T-c) using magnetic susceptibility measurements in the diamond anvil cell and determined that T-c for the high-density HDA polyamorph was higher than that for the beta-Sn structured Ge-II crystalline phase.

引用

页数：4

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