Effects of argon flow on heat transfer in a directional solidification process for silicon solar cells

被引:44
作者
Li, Zaoyang [1 ]
Liu, Lijun [1 ,2 ]
Ma, Wencheng [1 ]
Kakimoto, Koichi [3 ]
机构
[1] Xi An Jiao Tong Univ, Sch Energy & Power Engn, Xian 710049, Shaanxi, Peoples R China
[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
[3] Kyushu Univ, Appl Mech Res Inst, Kasuga, Fukuoka 8168580, Japan
关键词
Computer simulation; Gas flow; Heat transfer; Directional solidification; Solar cells; CZOCHRALSKI-GROWN SILICON; OXYGEN CONCENTRATION; CONVECTION; FURNACE; TEMPERATURE; MODEL;
D O I
10.1016/j.jcrysgro.2010.11.040
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A global heat transfer model, including the melt convection, argon flow, thermal conduction, thermal radiation and fully coupled boundary conditions, was developed to investigate the argon flow effect on the temperature distribution and melt convection in a directional solidification furnace for silicon solar cells. Both the effect of argon flow rate and the effect of furnace pressure were examined. It was found that the heat transfer at the melt free surface due to the gas convection cannot be neglected, though the argon flow contributes little to the global heat transfer at most radiative surfaces. The shear stress caused by the argon flow at the melt free surface becomes larger with the increase in argon flow rate and it further changes the velocity and temperature distributions in the silicon melt. We also found that the effect of argon flow on the melt convection at a low furnace pressure will be enhanced if the argon mass flow rate is kept constant. The solidification process can thus be controlled by modifying the argon flow rate and the furnace pressure. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:298 / 303
页数:6
相关论文
共 10 条
[1]   Solution of a stationary benchmark problem for natural convection with large temperature difference [J].
Becker, R ;
Braack, M .
INTERNATIONAL JOURNAL OF THERMAL SCIENCES, 2002, 41 (05) :428-439
[2]   THE EFFECTS OF GAS-PHASE CONVECTION ON CARBON CONTAMINATION OF CZOCHRALSKI-GROWN SILICON [J].
BORNSIDE, DE ;
BROWN, RA ;
FUJIWARA, T ;
FUJIWARA, H ;
KUBO, T .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (08) :2790-2804
[3]   Gas flow effect on global heat transport and melt convection in Czochralski silicon growth [J].
Kalaev, VV ;
Evstratov, IY ;
Makarov, YN .
JOURNAL OF CRYSTAL GROWTH, 2003, 249 (1-2) :87-99
[4]   Development and Application of a Structured/Unstructured Combined Mesh Scheme for Global Modeling of a Directional Solidification Process of Silicon [J].
Li, Zaoyang ;
Liu, Lijun ;
Kakimoto, Koichi .
CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010), 2010, 27 (01) :1047-1052
[5]   Three-dimensional global modeling of a unidirectional solidification furnace with square crucibles [J].
Liu, Lijun ;
Nakano, Satoshi ;
Kakimoto, Koichi .
JOURNAL OF CRYSTAL GROWTH, 2007, 303 (01) :165-169
[6]   Dynamic simulation of temperature and iron distributions in a casting process for crystalline silicon solar cells with a global model [J].
Liu, Lijun ;
Nakano, Satoshi ;
Kakimoto, Koichi .
JOURNAL OF CRYSTAL GROWTH, 2006, 292 (02) :515-518
[7]   Partly three-dimensional global modeling of a silicon Czochralski furnace. I. Principles, formulation and implementation of the model [J].
Liu, LJ ;
Kakimoto, K .
INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER, 2005, 48 (21-22) :4481-4491
[8]   The effects of argon gas flow rate and furnace pressure on oxygen concentration in Czochralski-grown silicon crystals [J].
Machida, N ;
Suzuki, Y ;
Abe, K ;
Ono, N ;
Kida, M ;
Shimizu, Y .
JOURNAL OF CRYSTAL GROWTH, 1998, 186 (03) :362-368
[9]   Effects of argon gas flow rate and guide shell on oxygen concentration in Czochralski silicon growth [J].
Ren, BY ;
Zhao, L ;
Zhao, XL ;
Wang, HX ;
Cao, ZQ ;
Zhu, HM ;
Fu, HB .
RARE METALS, 2006, 25 (01) :7-10
[10]   The carbon distribution in multicrystalline silicon ingots grown using the directional solidification process [J].
Teng, Ying-Yang ;
Chen, Jyh-Chen ;
Lu, Chung-Wei ;
Chen, Chi-Yung .
JOURNAL OF CRYSTAL GROWTH, 2010, 312 (08) :1282-1290