Efficiency droop alleviation in InGaN/GaN light-emitting diodes by graded-thickness multiple quantum wells

被引：57

作者：

Wang, C. H. ^{[1
,2
]}

Chang, S. P. ^{[1
,2
,3
]}

Chang, W. T. ^{[4
]}

Li, J. C. ^{[1
,2
]}

Lu, Y. S. ^{[1
,2
]}

Li, Z. Y. ^{[1
,2
]}

Yang, H. C. ^{[3
]}

Kuo, H. C. ^{[1
,2
]}

Lu, T. C. ^{[1
,2
]}

Wang, S. C. ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[3] Epistar Co Ltd, R&D Div, Hsinchu 300, Taiwan

[4] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 18期

关键词：

D O I：

10.1063/1.3507891

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InGaN/GaN light-emitting diodes (LEDs) with graded-thickness multiple quantum wells (GQW) was designed and grown by metal-organic chemical vapor deposition. The GQW structure, in which the well-thickness increases along [0001] direction, was found to have superior hole distribution as well as radiative recombination distribution by performing simulation modeling. Accordingly, the experimental investigation of electroluminescence spectrum reveals additional emission from the narrower wells within GQWs. Consequently, the efficiency droop can be alleviated to be about 16% from maximum at current density of 30 to 200 A/cm(2), which is much smaller than that for conventional LED (32%). Moreover, the light output power was enhanced from 18.0 to 24.3 mW at 20 A/cm(2). (C) 2010 American Institute of Physics. [doi:10.1063/1.3507891]

引用

页数：3

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