Optically induced level anticrossing in undoped GaAs/AlGaAs coupled double quantum wells

被引：5

作者：

Shin, Y. H. ^{[1
]}

Park, Y. H. ^{[1
]}

Kim, Yongmin ^{[1
,2
]}

Shon, Y. ^{[3
]}

机构：

[1] Dankook Univ, Dept Appl Phys, Yongin 448701, South Korea

[2] Natl Inst Mat Sci, Quantum Dot Res Ctr, Tsukuba, Ibaraki 3050003, Japan

[3] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul 100715, South Korea

来源：

JOURNAL OF LUMINESCENCE | 2010年 / 130卷 / 12期

关键词：

GaAs; Quantum well; Photoluminescence; ELECTRIC-FIELDS; TRANSPORT; EXCITONS;

D O I：

10.1016/j.jlumin.2010.08.008

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report a photoluminescence detected anticrossing of the energy levels in an undoped asymmetric coupled-double-quantum-well buried in a p-i-n structure. Due to the built-in electric field, the quantum wells are tilted in such a way that the symmetric energy level is higher than that of the antisymmetric one in the conduction band. Keeping the laser excitation energy below the barrier, with increasing laser power, the level anticrossing and the quantum confined Stark effect were observed due to decreasing built-in electric field by the photogenerated electron and hole pairs. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2437 / 2441

页数：5

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