Enhanced Solar Cell Conversion Efficiency of InGaN/GaN Multiple Quantum Wells by Piezo-Phototronic Effect

被引：90

作者：

Jiang, Chunyan ^{[1
,2
,3
]}

Jing, Liang ^{[1
,2
,3
]}

Huang, Xin ^{[1
,2
,3
]}

Liu, Menmeng ^{[1
,2
,3
]}

Du, Chunhua ^{[1
,2
]}

Liu, Ting ^{[1
,2
,3
]}

Pu, Xiong ^{[1
,2
]}

Hu, Weiguo ^{[1
,2
]}

Wang, Zhong Lin ^{[1
,2
,4
]}

机构：

[1] Chinese Acad Sci, Beijing Inst Nanoenergy & Nanosyst, Beijing 100083, Peoples R China

[2] Natl Ctr Nanosci & Technol NCNST, CAS Ctr Excellence Nanosci, Beijing 100190, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[4] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

来源：

ACS NANO | 2017年 / 11卷 / 09期

基金：

中国国家自然科学基金;

关键词：

solar cell; piezo-phototronic effect; InGaN/GaN multiple quantum wells; optical absorption; conversion efficiency; BAND-GAP; PERFORMANCE; DEVICES; STRAIN;

D O I：

10.1021/acsnano.7b04935

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The piezo-phototronic effect is the tuning of piezoelectric polarization charges at the interface to largely enhance the efficiency of optoelectronic processes related to carrier separation or recombination. Here, we demonstrated the enhanced short-circuit current density and the conversion efficiency of InGaN/GaN multiple quantum well solar cells with an external stress applied on the device. The external-stress-induced piezoelectric charges generated at the interfaces of InGaN and GaN compensate the piezoelectric charges induced by lattice mismatch stress in the InGaN wells. The energy band realignment is calculated with a self-consistent numerical model to clarify the enhancement mechanism of optical-generated carriers. This research not only theoretically and experimentally proves the piezo-phototronic effect modulated the quantum photovoltaic device but also provides a great promise to maximize the use of solar energy in the current energy revolution.

引用

页码：9405 / 9412

页数：8

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