A comparative study of n-p GaN/SiC heterojunction and p-n 6H-SiC homojunction diodes

被引：5
|
作者：
Vacas, J
Lahrèche, H
Monteiro, T
Gaspar, C
Pereira, E
Brylinski, C
di Forte-Poisson, MA
机构：
[1] Thomson CSF, Cent Rech Lab, FR-91404 Orsay, France
[2] CNRS, UPR 10, CRHEA, FR-06560 Valbonne, France
[3] Univ Aveiro, Dept Fis, PT-3810 Aveiro, Portugal
来源：
SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷
关键词：
deep level; electroluminescence; heterojunction diodes; homojunction diodes;
D O I：
10.4028/www.scientific.net/MSF.338-342.1651
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A comparative study between GaN/SiC heterojunction and 6H-SiC homojunction diodes has been performed to understand the physical properties of n-p GaN/SiC heterojunction interface. The 6H-SiC homojunction diodes presented typical I-V characteristics with satisfactory breakdown voltage (congruent to -800 V), however, the GaN/SiC heterojunction diodes showed an abnormal low forward turn-on voltage (congruent to1.8 V). The presence of a deep-level 1 eV below the p-SiC conduction band, is probably responsible for a tunneling- assisted current at low forward voltages, due to a high concentration of interface defects.
引用
收藏
页码：1651 / 1654
页数：4
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