The improvement of temperature coefficient of frequency in thin film bulk acoustic wave resonator using secondary harmonics

被引：0
作者：
Yoshino, Y [1 ]
Takeuchi, M [1 ]
Yamada, H [1 ]
Goto, Y [1 ]
Nomura, T [1 ]
Makino, T [1 ]
Arai, S [1 ]
机构：
[1] Murata Mfg Co Ltd, Kyoto, Japan
来源：
NANO-AND MICROELECTROMECHANICAL SYSTEMS (NEMS AND MEMS) AND MOLECULAR MACHINES | 2003年 / 741卷
关键词：
D O I：
暂无
中图分类号：
TH [机械、仪表工业];
学科分类号：
0802 ;
摘要：
We have succeeded in making an 870MHz-range thin film bulk acoustic wave (BAW) resonator that has a small temperature coefficient of frequency (TCF) using secondary harmonies. The 870MHz-range BAW resonator has been requested to have nearly zero TCF, because it will be used in an oscillator for remote keyless entry systems. The BAW resonator has composite structure that consists of Al electrodes and ZnO/SiO2. We directed our attention to the fact that ZnO and Al have negative TCF, and SiO2 has a positive one, It. is theoretically possible to. make zero TCF BAW resonators by optimizing the thickness ratio of ZnO and SiO2. However, using fundamental resonance, TCF is so sensitive to the thickness ratio that it cannot be easily controlled by MEMS techniques. We found in finite element method simulation and confirmed by experiment that the TCF of secondary harmonics has a local minimum when changing the ZnO/SiO2 thickness ratio. As the result, a nearly zero TCF resonator without strict control of ZnO/SiO2, thickness ratio has been realized by adopting Al/Zno/SiO2/ZnO/Al/SiO2 structure @and combining thermal oxidized Si and sputtered SiO2. The resonator has the TCF of - 1.86ppm/degree in the range of -40 to 85 degrees centigrade.
引用
收藏
页码：233 / 238
页数：6
相关论文
共 50 条
[31]   High frequency response of Bragg reflector type film bulk acoustic wave resonator [J].
Kim, JH ;
Lee, SH ;
Ahn, JH ;
Lee, JK .
INTEGRATED FERROELECTRICS, 2001, 41 (1-4) :1797-1806
[32]   Film Bulk Acoustic Wave Resonator in 10-20 GHz Frequency Range [J].
Nor, N. I. M. ;
Khalid, N. ;
Ramli, Muhammad M. ;
Isa, M. Mohamad ;
Ahmad, N. ;
Isa, Siti S. Mat ;
Kasjoo, S. R. .
2016 3RD INTERNATIONAL CONFERENCE ON ELECTRONIC DESIGN (ICED), 2016, :481-485
[33]   Properties of LiNbO3 Thin Film Deposited by Chemical Vapor Deposition and Frequency Characteristics of Film Bulk Acoustic Wave Resonator [J].
Kadota, Michio ;
Suzuki, Yusuke ;
Ito, Yoshihiro .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (07)
[34]   Electromechanical coupling constant extraction of thin-film piezoelectric materials using a bulk acoustic wave resonator [J].
Naik, RS ;
Lutsky, JJ ;
Reif, R ;
Sodini, CG .
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 1998, 45 (01) :257-263
[35]   Tunable Thin Film Bulk Acoustic Wave Resonator Based on BaxSr1-xTiO3 Thin Film [J].
Noeth, Andreas ;
Yamada, Tomoaki ;
Muralt, Paul ;
Tagantsev, Alexander K. ;
Setter, Nava .
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 2010, 57 (02) :379-385
[36]   Thin film bulk acoustic wave filter [J].
Ylilammi, N ;
Ellä, J ;
Partanen, M ;
Kaitila, J .
IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL, 2002, 49 (04) :535-539
[37]   Temperature Sensing by Using Film Bulk Acoustic Resonator at 2.4 GHz Band [J].
Kao, Yao-Huang ;
Lin, Jon-Hong .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (11)
[38]   3.4 GHz composite thin film bulk acoustic wave resonator for miniaturized atomic clocks [J].
Artieda, Alvaro ;
Muralt, Paul .
APPLIED PHYSICS LETTERS, 2011, 98 (26)
[39]   ELECTRODE EFFECTS ON MASS SENSITIVITY OF GaN THIN FILM BULK ACOUSTIC WAVE RESONATOR SENSORS [J].
Liu, Hai-qiang ;
Ma, Sheng-lin ;
Wang, Hui-yuan ;
Wang, Qing-ming ;
Qin, Li-feng .
PROCEEDINGS OF THE 2015 SYMPOSIUM ON PIEZOELECTRICITY, ACOUSTIC WAVES AND DEVICE APPLICATIONS, 2015, :179-183
[40]   A THIN-FILM BULK-ACOUSTIC-WAVE RESONATOR-CONTROLLED OSCILLATOR ON SILICON [J].
BURKLAND, WA ;
LANDIN, AR ;
KLINE, GR ;
KETCHAM, RS .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (11) :531-533
12345