Characterization of InGaGdN layers prepared by molecular beam epitaxy

被引：7

作者：

Tawil, Siti Nooraya Mohd ^{[1
,2
]}

Kakimi, Rina ^{[1
]}

Krishnamurthy, Daivasigamani ^{[1
]}

Emura, Shuichi ^{[1
]}

Tambo, Hiroyuki ^{[1
]}

Hasegawa, Shigehiko ^{[1
]}

Asahi, Hajime ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

[2] Tun Hussein Onn Univ Malaysia, Fac Elect & Elect Engn, Batu Pahat Johor 86400, Malaysia

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2010年 / 4卷 / 11期

关键词：

molecular beam epitaxy; thin films; nitride semiconductors; XAFS;

D O I：

10.1002/pssr.201004273

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Gd-doped InGaN layers were prepared by plasma-assisted molecular-beam epitaxy in search of new functional diluted magnetic semiconductors for their potential use in spintronics. The local structure around the Gd atoms was examined by the Gd L-III-edge of X-ray absorption fine structure. It was found that the majority of Gd atoms substitutionally occupied the cation sites in the InGaGdN layers. Clear hysteresis and saturation magnetization were observed from the magnetization versus field curves examined by means of a superconducting quantum interference device magnetometer at low and room temperatures. In addition, the incorporation of extra shallow donors by co-doping InGaN with both Gd and Si showed higher magnetization than the undoped InGaGdN. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：308 / 310

页数：3

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