Growth by atomic layer epitaxy and characterization of thin films of ZnO

被引：25

作者：

Kopalko, K ^{[1
]}

Wójcik, A ^{[1
]}

Godlewski, M ^{[1
]}

Lusakowska, E ^{[1
]}

Paszkowicz, W ^{[1
]}

Domagala, JZ ^{[1
]}

Godlewski, MM ^{[1
]}

Szczerbakow, A ^{[1
]}

Swiatek, K ^{[1
]}

Dybko, K ^{[1
]}

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

E-MRS 2004 FALL MEETING SYMPOSIA C AND F | 2005年 / 2卷 / 03期

关键词：

D O I：

10.1002/pssc.200460660

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Atomic layer epitaxy (ALE) was applied to grow thin films of monocrystalline and polycrystalline ZnO. Monocrystalline films were obtained only for GaN/Al2O3 substrates, whereas use of sapphire, silicon or soda lime glass resulted in either 3D growth mode or in polycrystalline films showing preferential orientation along the c axis. Successful Mn doping of ZnO films is reported, when using organic Mn precursors. (c) 2005 WILEY-VCH Verlag GmbH A Co. KGaA, Weinheim.

引用

页码：1125 / 1130

页数：6

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