Growth by atomic layer epitaxy and characterization of thin films of ZnO

被引:25
作者
Kopalko, K [1 ]
Wójcik, A [1 ]
Godlewski, M [1 ]
Lusakowska, E [1 ]
Paszkowicz, W [1 ]
Domagala, JZ [1 ]
Godlewski, MM [1 ]
Szczerbakow, A [1 ]
Swiatek, K [1 ]
Dybko, K [1 ]
机构
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
来源
E-MRS 2004 FALL MEETING SYMPOSIA C AND F | 2005年 / 2卷 / 03期
关键词
D O I
10.1002/pssc.200460660
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Atomic layer epitaxy (ALE) was applied to grow thin films of monocrystalline and polycrystalline ZnO. Monocrystalline films were obtained only for GaN/Al2O3 substrates, whereas use of sapphire, silicon or soda lime glass resulted in either 3D growth mode or in polycrystalline films showing preferential orientation along the c axis. Successful Mn doping of ZnO films is reported, when using organic Mn precursors. (c) 2005 WILEY-VCH Verlag GmbH A Co. KGaA, Weinheim.
引用
收藏
页码:1125 / 1130
页数:6
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