High temperature characterization of MBE grown DyP/GaAs and DyAs/GaAs

被引：0

作者：

Lee, PP ^{[1
]}

Sadwick, LP ^{[1
]}

Hwu, RJ ^{[1
]}

Lai, TC ^{[1
]}

Huang, JY ^{[1
]}

Wang, X ^{[1
]}

Kumar, BR ^{[1
]}

Balasubramaniam, H ^{[1
]}

机构：

[1] Univ Utah, Dept Elect Engn, Salt Lake City, UT 84112 USA

来源：

1998 FOURTH INTERNATIONAL HIGH TEMPERATURE ELECTRONICS CONFERENCE | 1998年

关键词：

D O I：

10.1109/HITEC.1998.676805

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

Characterization of MBE grown DyP/GaAs and DyAs/GaAs is reported. DC characterization, including I-V and C-V measurements, was performed at different temperatures from 25 to 200 degrees C. High frequency characterization of DyP/GaAs Schottky diodes was also performed by measuring the scattering parameters (S parameters) as a function of frequency. A cut-off frequency of close to 2.5 THz was determined from the equivalent circuit parameters for the Schottky diodes having an area of 10-mu-m(2). DyP is lattice matched to GaAs, with a room temperature mismatch of less than 0.01% and is stable in air with no sign of oxidation, even after months of ambient exposure. High quality DyP and DyAs epilayers were consistently obtained for growth temperature ranging from 500 to 600 degrees C with growth rates between 0.5 and 0.7 mu-m/hr. DyP epilayers are n-type with electron concentrations of 3x10(20) to 4x10(20) cm(-3), room temperature mobilities of 250 to 300 cm(2)/V center-dot, and a barrier of height of 0.81 eV to GaAs. DyAs epilayers are also n-type with carrier concentrations of 1x10(21) to 2x10(21) cm(-3), and mobilities between 25 and 40 cm(2)/V center-dot s.

引用

页码：287 / 291

页数：5