CMOS Single-Photon Avalanche Diode Pixel Design for a Gun Muzzle Flash Detection Camera

被引：1

作者：

Katz, A. ^{[1
]}

Vainstein, C. ^{[1
]}

Shoham, A. ^{[1
]}

Blank, T. ^{[1
]}

Leitner, T. ^{[2
]}

Fenigstein, A. ^{[2
]}

Birk, Y. ^{[1
]}

Nemirovsky, Y. ^{[1
]}

机构：

[1] Technion Israel Inst Technol, Elect Engn Dept, IL-3200003 Haifa, Israel

[2] TowerJazz, CIS Res & Dev Dept, IL-2353017 Migdal Haemeq, Israel

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 10期

关键词：

CMOS single-photon avalanche diode (SPAD); dark count rate (DCR); muzzle flash; photon detection efficiency (POE); quenching; IMAGE SENSOR; TECHNOLOGY; NONUNIFORMITY;

D O I：

10.1109/TED.2018.2866630

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the architecture and design of a CMOS single-photon avalanche diode (SPAD) pixel that was selected to be the basis for a gun muzzle flash detection camera. The SPAD sensor and auxiliary circuitry are fabricated in a standard 0.18-mu m CMOS image sensor technology. The pixel integrates a 25-mu m pitch SPAD, a variable-load quenching circuit implemented with a 1.8-V pMOS, and digital processing electronics providing an 8-bit output bus. The SPAD is low noise (around 100-Hz dark count rate at 1.8-V excess voltage) and has a real peak photon detection efficiency (not averaged on pixel pitch) of 9.2% at 450 nm (1.8-V excess voltage). The pixel delivers intensity information through photon counting, up to 256 counts per frame with down to 5-mu s integration time for the full dynamic range. The pixel memories enable parallel processing and global-shutter readout, preventing motion artifacts and partial exposure effects. The pixel can acquire very fast optical events at a high frame-rate (up to 200 kilo frames/s) and at a single-photon level. The pixel has an 8-bit parallel output bus.

引用

页码：4407 / 4412

页数：6

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