Comprehensive investigation of the interfacial charges and dipole in GeOx/AL2O3 gate stacks of Ge MOS capacitor by postdeposition annealing

被引：3

作者：

Zhou, Lixing ^{[1
,2
]}

Wang, Xiaolei ^{[1
,2
]}

Ma, Xueli ^{[1
,2
]}

Han, Kai ^{[3
]}

Wang, Yanrong ^{[4
]}

Xiang, Jinjuan ^{[1
,2
]}

Yang, Hong ^{[1
,2
]}

Zhang, Jing ^{[4
]}

Zhao, Chao ^{[1
,2
]}

Ye, Tianchun ^{[1
,2
]}

Wang, Wenwu ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China

[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[3] Weifang Univ, Dept Phys & Elect Sci, Weifang 261061, Peoples R China

[4] North China Univ Technol, Microelect Dept, Beijing 100041, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2018年 / 57卷 / 10期

关键词：

ELECTRICAL-PROPERTIES; SURFACE PASSIVATION; DEPOSITION; IMPACT; HFO2; N-2;

D O I：

10.7567/JJAP.57.101101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Postdeposition annealing (PDA) in N-2, O-2, NH3, and H-2 is employed to explore the modulation of the interfacial charges and dipole in GeOx/Al2O3 gate stacks of a Ge MOS capacitor. We find that the properties of both the Ge/GeOx and GeOx/Al2O3 interfaces can be significantly tuned after PDA. Three types of charges exist in the Ge gate stacks: (i) the interfacial charges at the Ge/GeOx interface (Q(1)), (ii) the interfacial charges at the GeOx/Al2O3 interface (Q(2)), and (iii) the electric dipole at the GeOx/Al2O3 interface. After PDA, interfacial charge and dipole densities can be effectively tuned in different ambients. In particular, the PDA in the O-2 and NH3 ambients is more distinguished to decrease the interfacial charges at the Ge/GeO and GeOx/Al2O3 interfaces. In addition, dipole polarity can be modulated by annealing. Furthermore, we comprehensively analyze the operative mechanism to explain the charge distribution changes after PDA in various ambients. This work can be effectively applied to enhance the performance of Ge-based devices. (C) 2018 The Japan Society of Applied Physics

引用

页数：7

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