MOCVD growth of transparent conducting Cd2SnO4 thin films

被引：20
作者：
Metz, AW [1 ]
Lane, MA
Kannewurf, CR
Poeppelmeier, KR
Marks, TJ
机构：
[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
[2] Northwestern Univ, Dept Elect & Comp Engn, Evanston, IL 60208 USA
来源：
CHEMICAL VAPOR DEPOSITION | 2004年 / 10卷 / 06期
关键词：
D O I：
10.1002/cvde.200304177
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Communication: The first preparation of transparent conducting Cd2SnO4 thin films by a simple MOCVD process is described. As-deposited films using Cd(hfa)(2)(TMEDA) (Figure), at 365 degreesC are found to be highly crystalline with a relatively wide range of grain size of 100-300 nm. XRD indicates a cubic spinel CdSnO4 crystal structure and the possible presence of a small amount of CdO. The films exhibit conductivities of 2170 S/cm and a bandgap of 3.3 eV, rivaling those of commercial tin-doped indium oxide.
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页码：297 / +
页数：5
相关论文
共 59 条
[1]   Deposition of II-VI thin films by LP-MOCVD using novel single-source precursors [J].
Afzaal, M ;
Crouch, D ;
Malik, MA ;
Motevalli, M ;
O'Brien, P ;
Park, JH ;
Woollins, JD .
EUROPEAN JOURNAL OF INORGANIC CHEMISTRY, 2004, (01) :171-177
[2]  
Afzaal M, 2002, CHEM VAPOR DEPOS, V8, P187, DOI 10.1002/1521-3862(20020903)8:5<187::AID-CVDE187>3.0.CO
[3]  
2-5
[4]  
Akao Y, 1999, 2ND INTERNATIONAL CONFERENCE ON COATINGS ON GLASS, ICCG, P338
[5]  
[Anonymous], 2000, MRS B, V25, P15
[6]  
Babcock JR, 2001, CHEM VAPOR DEPOS, V7, P239, DOI 10.1002/1521-3862(200111)7:6<239::AID-CVDE239>3.0.CO
[7]  
2-M
[8]   Development and implementation of new volatile Cd and Zn precursors for the growth of transparent conducting oxide thin films via MOCVD [J].
Babcock, JR ;
Wang, A ;
Edleman, NL ;
Benson, DD ;
Metz, AW ;
Metz, MV ;
Marks, TJ .
MATERIALS SCIENCE OF NOVEL OXIDE-BASED ELECTRONICS, 2000, 623 :317-328
[9]  
Bowden M. E., 1990, Powder Diffr, V5, P36, DOI [10.1017/S0885715600015190, DOI 10.1017/S0885715600015190]
[10]   Chemical vapour deposition of coatings [J].
Choy, KL .
PROGRESS IN MATERIALS SCIENCE, 2003, 48 (02) :57-170
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