Natural nonuniformities in the height of a Schottky barrier

被引：4

作者：

Bondarenko, VB ^{[1
]}

Kudinov, YA ^{[1
]}

Ershov, SG ^{[1
]}

Korablev, VV ^{[1
]}

机构：

[1] St Petersburg State Tech Univ, St Petersburg 195251, Russia

来源：

SEMICONDUCTORS | 1998年 / 32卷 / 05期

关键词：

Magnetic Material; Barrier Height; Electromagnetism; Doping Level; Schottky Barrier;

D O I：

10.1134/1.1187426

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

This paper discusses natural nonuniformities in the height of a Schottky barrier caused by the discreteness of impurity charges randomly distributed in the depletion region. The parallel-diode model is used to show that these natural fluctuations in the effective barrier height at a metal-semiconductor junction, on the average, do not exceed kT at room temperature for doping levels less than or equal to 10(18) cm(-3). (C) 1998 American Institute of Physics. [S1063-7826(98)00905-3].

引用

页码：495 / 496

页数：2

共 8 条

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[2]

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[3]

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[8]

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