Review of defect investigations by means of positron annihilation in II-VI compound semiconductors

被引：76
|
作者：
Krause-Rehberg, R [1 ]
Leipner, HS [1 ]
Abgarjan, T [1 ]
Polity, A [1 ]
机构：
[1] Univ Halle Wittenberg, Fachbereich Phys, D-06099 Halle, Germany
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1998年 / 66卷 / 06期
关键词：
D O I：
10.1007/s003390050721
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An overview is given on positron annihilation studies of vacancy-type defects in Cd-and Zn-related II-VI com pound semiconductors. The most noticeable results among the positron investigations have been obtained by the study of the indium-or chlorine-related A centers in as-grown cadmium telluride and by the study of the defect chemistry of the mercury vacancy in Hg1-xCdxTe after post-growth annealing. The experiments on defect generation and annihilation after low-temperature electron irradiation of II-VI compounds are also reviewed. The characteristic positron lifetimes are given for cation and anion vacancies.
引用
收藏
页码：599 / 614
页数：16
相关论文
共 50 条
  • [31] Stoichiometric and ultra-stable nanoparticles of II-VI compound semiconductors
    A. Kasuya
    Y. Noda
    I. Dmitruk
    V. Romanyuk
    Y. Barnakov
    K. Tohji
    V. Kumar
    R. Belosludov
    Y. Kawazoe
    N. Ohuchi
    The European Physical Journal D - Atomic, Molecular, Optical and Plasma Physics, 2005, 34 : 39 - 41
  • [32] Stoichiometric and ultra-stable nanoparticles of II-VI compound semiconductors
    Kasuya, A
    Noda, Y
    Dmitruk, I
    Romanyuk, V
    Barnakov, Y
    Tohji, K
    Kumar, V
    Belosludov, R
    Kawazoe, Y
    Ohuchi, N
    EUROPEAN PHYSICAL JOURNAL D, 2005, 34 (1-3): : 39 - 41
  • [33] Ultrafast phenomena in II-VI semiconductors
    Kalt, H
    Wachter, S
    Luerssen, D
    Hoffmann, J
    ACTA PHYSICA POLONICA A, 1998, 94 (02) : 139 - 146
  • [34] II-VI SEMICONDUCTORS COME OF AGE
    GUNSHOR, R
    NURMIKKO, A
    KOBAYASHI, M
    PHYSICS WORLD, 1992, 5 (03) : 46 - 49
  • [35] THE PROBLEM OF DOPING IN II-VI SEMICONDUCTORS
    CHADI, DJ
    ANNUAL REVIEW OF MATERIALS SCIENCE, 1994, 24 : 45 - 62
  • [36] The role of underbarrier transitions in processes of annihilation of excess charge carriers in II-VI semiconductors
    Novikov, G. F.
    Rabenok, E. V.
    Gapanovich, M. V.
    SEMICONDUCTORS, 2010, 44 (05) : 575 - 580
  • [37] Applications of II-VI semimagnetic semiconductors
    Mycielski, A.
    Kowalczyk, L.
    Galazka, R. R.
    Sobolewski, Roman
    Wang, D.
    Burger, A.
    Sowinska, M.
    Groza, M.
    Siffert, P.
    Szadkowski, A.
    Witkowska, B.
    Kaliszek, W.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2006, 423 (1-2) : 163 - 168
  • [38] Chemical polishing of II-VI semiconductors
    Tomashik, VN
    Tomashik, ZF
    INORGANIC MATERIALS, 1997, 33 (12) : 1230 - 1233
  • [39] Excitons in motion in II-VI semiconductors
    Davies, J. J.
    Smith, L. C.
    Wolverson, D.
    Kochereshko, V. P.
    Cibert, J.
    Mariette, H.
    Boukari, H.
    Wiater, M.
    Karczewski, G.
    Wojtowicz, T.
    Gust, A.
    Kruse, C.
    Hommel, D.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2010, 247 (06): : 1521 - 1527
  • [40] BOUND BIEXCITONS IN II-VI SEMICONDUCTORS
    RAZBIRIN, BS
    NELSON, DK
    ERLAND, J
    PANTKE, KH
    LYSSENKO, VG
    HVAN, JM
    SOLID STATE COMMUNICATIONS, 1995, 93 (01) : 65 - 70
12345