Modeling Czochralski growth of oxide crystals for piezoelectric and optical applications

被引：1

作者：

Stelian, C. ^{[1
]}

Duffar, T. ^{[1
]}

机构：

[1] Univ Grenoble Alpes, CNRS, Grenoble INP, SIMAP, F-38000 Grenoble, France

来源：

VIII INTERNATIONAL SCIENTIFIC COLLOQUIUM ON MODELLING FOR MATERIALS PROCESSING | 2018年 / 355卷

关键词：

INTERFACE SHAPE; SAPPHIRE; TRANSPORT; ROTATION;

D O I：

10.1088/1757-899X/355/1/012002

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Numerical modeling is applied to investigate the impact of crystal and crucible rotation on the flow pattern and crystal-melt interface shape in Czochralski growth of oxide semi-transparent crystals used for piezoelectric and optical applications. Two cases are simulated in the present work: the growth of piezoelectric langatate (LGT) crystals of 3 cm in diameter in an inductive furnace, and the growth of sapphire crystals of 10 cm in diameter in a resistive configuration. The numerical results indicate that the interface shape depends essentially on the internal radiative heat exchanges in the semi-transparent crystals. Computations performed by applying crystal/crucible rotation show that the interface can be flattened during LGT growth, while flat-interface growth of large diameter sapphire crystals may not be possible.

引用

页数：6

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