Pulsed laser deposition of ZnGa2O4 phosphor films

被引：30

作者：

Reshmi, R ^{[1
]}

Krishna, KM ^{[1
]}

Manoj, R ^{[1
]}

Jayaraj, MK ^{[1
]}

机构：

[1] Cochin Univ Sci & Technol, Dept Phys, Optoelect Device Lab, Cochin 682022, Kerala, India

来源：

SURFACE & COATINGS TECHNOLOGY | 2005年 / 198卷 / 1-3期

关键词：

X oxide phosphor; PLD; X-ray diffraction;

D O I：

10.1016/j.surfcoat.2004.10.072

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Zinc gallate (ZnGa2O4) phosphor thin films have been deposited by pulsed laser deposition (PLD) technique on amorphous silica and glass substrates at room temperature at various oxygen pressures. The films were deposited from presintered targets prepared by solid-state reaction of constituent oxides at elevated temperature. The photoluminescent (PL) emission studies on manganese-doped zinc gallate powder phosphors show green emission (504 nm) having maximum luminescence for a Mn concentration of 2 at.%. The films deposited under different deposition condition have been characterized using X-ray diffraction studies and PL measurements. The crystallinity of the ZnGa2O4 films is highly dependent on deposition conditions. Under optimized deposition condition crystalline ZnGa2O4 were grown on amorphous silica substrates at room temperature. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：345 / 349

页数：5

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