High mobility in α-phosphorene isostructures with low deformation potential

被引：27

作者：

Fang, Ruhao ^{[1
,2
]}

Cui, Xiangyuan ^{[3
,4
]}

Stampfl, Catherine ^{[1
,2
]}

Ringer, Simon P. ^{[3
,4
]}

Zheng, Rongkun ^{[1
,2
,4
]}

机构：

[1] Univ Sydney, Sch Phys, Sydney, NSW 2006, Australia

[2] Univ Sydney, Nano Inst, Sydney, NSW 2006, Australia

[3] Univ Sydney, Sch Aerosp Mech & Mechatron Engn, Sydney, NSW 2006, Australia

[4] Univ Sydney, Australian Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia

来源：

PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 2020年 / 22卷 / 04期

基金：

澳大利亚研究理事会;

关键词：

CHARGE-CARRIER MOBILITY; ELECTRONIC-STRUCTURE; BLACK PHOSPHORUS; MOS2; MONOLAYER; STABILITY; GRAPHENE; IMPURITY; CARBON; SI;

D O I：

10.1039/c9cp05828a

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The exceptionally low deformation potential is proposed as the key determinant for the high carrier mobility in alpha-phosphorene. This is related to its unique corrugated two-dimensional structure. Herein, we present a systematic first-principles density functional theory study on ten alpha-phosphorene isostructures by calculating the three key parameters of the carrier mobility. An electron mobility in the armchair direction with a value comparable to alpha-phosphorene is found in alpha-PAs, alpha-PCH, and alpha-AsCH, due to the structure-caused low deformation potential. The highest carrier mobility is predicted in alpha-graphane because of a two-orders-of-magnitude smaller deformation potential than the other isostructures. The low deformation potential can be correlated to the separation of charge carriers from neighbouring unit cells. This study highlights a feasible route to generating high mobility materials through deformation potential engineering.

引用

页码：2276 / 2282

页数：7

共 51 条

[1] DEFORMATION POTENTIALS AND MOBILITIES IN NON-POLAR CRYSTALS [J].

BARDEEN, J ;

SHOCKLEY, W .

PHYSICAL REVIEW, 1950, 80 (01) :72-80

[2] Charge carrier mobility in quasi-one-dimensional systems:: Application to a guanine stack [J].

Beleznay, FB ;

Bogár, F ;

Ladik, J .

JOURNAL OF CHEMICAL PHYSICS, 2003, 119 (11) :5690-5695

[3] Stability and Exfoliation of Germanane: A Germanium Graphane Analogue [J].

Bianco, Elisabeth ;

Butler, Sheneve ;

Jiang, Shishi ;

Restrepo, Oscar D. ;

Windl, Wolfgang ;

Goldberger, Joshua E. .

ACS NANO, 2013, 7 (05) :4414-4421

[4] Ultrahigh electron mobility in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Jiang, Z. ;

Klima, M. ;

Fudenberg, G. ;

Hone, J. ;

Kim, P. ;

Stormer, H. L. .

SOLID STATE COMMUNICATIONS, 2008, 146 (9-10) :351-355

[5] Ab-initio simulations of deformation potentials and electron mobility in chemically modified graphene and two-dimensional hexagonal boron-nitride [J].

Bruzzone, Samantha ;

Fiori, Gianluca .

APPLIED PHYSICS LETTERS, 2011, 99 (22)

[6]

Chun-Ying P., 2015, CHINESE PHYS B, V24

[7] Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane [J].

Elias, D. C. ;

Nair, R. R. ;

Mohiuddin, T. M. G. ;

Morozov, S. V. ;

Blake, P. ;

Halsall, M. P. ;

Ferrari, A. C. ;

Boukhvalov, D. W. ;

Katsnelson, M. I. ;

Geim, A. K. ;

Novoselov, K. S. .

SCIENCE, 2009, 323 (5914) :610-613

[8] Negative Poisson's ratio in 2D life-boat structured crystals [J].

Fang, Ruhao ;

Cui, Xiangyuan ;

Stampfl, Catherine ;

Ringer, Simon P. ;

Zheng, Rongkun .

NANOSCALE ADVANCES, 2019, 1 (03) :1117-1123

[9] Strain-Engineered Ultrahigh Mobility in Phosphorene for Terahertz Transistors [J].

Fang, Ruhao ;

Cui, Xiangyuan ;

Khan, Mansoor A. ;

Stampfl, Catherine ;

Ringer, Simon P. ;

Zheng, Rongkun .

ADVANCED ELECTRONIC MATERIALS, 2019, 5 (03)

[10] Band structure, deformation potentals, and carrier mobility in strained Si, Ge, and SiGe alloys [J].

Fischetti, MV ;

Laux, SE .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (04) :2234-2252

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