Synthesis, AACVD and X-ray crystallographic structures of group 13 monoalkoxometallanes

被引:20
作者
Knapp, Caroline E. [1 ]
Pemberton, Leah [1 ]
Carmalt, Claire J. [1 ]
Pugh, David [1 ]
McMillan, Paul F. [1 ]
Barnett, Sarah A. [1 ]
Tocher, Derek A. [1 ]
机构
[1] UCL, Dept Chem, London, England
基金
英国工程与自然科学研究理事会;
关键词
Gallium alkoxide; indium alkoxide; synthesis; CVD; CHEMICAL-VAPOR-DEPOSITION; FLUORINATED AMINOALKOXIDE; ALKOXIDE COMPLEXES; THIN-FILMS; GALLIUM; PRECURSORS; SESQUIALKOXIDES; ORGANOGALLIUM; ALUMINUM;
D O I
10.3233/MGC-2010-0002
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The group 13 monoalkoxometallanes [Me2Ga(OC(CH3)(2)CH2OMe)](2) (1) and [Me2In(OCH(CH3)CH2OMe)](2) (2), incorporating donor functionalised alkoxides, were synthesised from the reaction of GaMe3 or InMe3 with ROH (R = C(CH3)(2)CH2OMe (1); R = CH(CH3)CH2OMe (2)) in toluene. X-ray crystallography showed that both compounds adopt dimeric structures with a planar M2O2 ring, and each group 13 atom is coordinated in a distorted trigonal bipyramidal geometry. The AACVD reaction of GaMe3 and ROH (R = C(CH3)(2)CH2OMe, CH2CH2OMe, CH2CH2NMe2) resulted in the formation of thin films of Ga2O3 on glass substrates at 450 degrees C. The gallium oxide films were analyzed by scanning electron microscopy, X-ray powder diffraction, energy dispersive analysis of X-rays, wavelength dispersive analysis of X-rays and X-ray photoelectron spectroscopy. This CVD technique offers a rapid, convenient route to Ga2O3, which involves the in situ formation of dimethylgallium alkoxides, of the type [Me2Ga(mu-OR)](2) similar to compound 1.
引用
收藏
页码:31 / 40
页数:10
相关论文
共 27 条
[1]  
[Anonymous], 2015, Acta Crystallogr., V71, P3
[2]   Oxygen sensing properties at high temperatures of β-Ga2O3 thin films deposited by the chemical solution deposition method [J].
Bartic, Marilena ;
Ogita, Masami ;
Isai, Masaaki ;
Baban, Cristian-Loan ;
Suzuki, Hisao .
JOURNAL OF APPLIED PHYSICS, 2007, 102 (02)
[3]   Molecular precursors to gallium oxide thin films [J].
Basharat, S ;
Carmalt, CJ ;
King, SJ ;
Peters, ES ;
Tocher, DA .
DALTON TRANSACTIONS, 2004, (21) :3475-3480
[4]   Synthesis and structures of gallium alkoxides [J].
Basharat, Siama ;
Knapp, Caroline E. ;
Carmalt, Claire J. ;
Barnett, Sarah A. ;
Tocher, Derek A. .
NEW JOURNAL OF CHEMISTRY, 2008, 32 (09) :1513-1518
[5]   Syntheses, X-ray structures and CVD studies of diorganoalkoxogallanes [J].
Basharat, Siama ;
Carmalt, Claire J. ;
Palgrave, Robert ;
Barnett, Sarah A. ;
Tocher, Derek A. ;
Davies, Hywel O. .
JOURNAL OF ORGANOMETALLIC CHEMISTRY, 2008, 693 (10) :1787-1796
[6]   Gallium oxide thin films from the AACVD of [Ga(NMe2)3]2 and donor functionalised alcohols [J].
Basharat, Siama ;
Carmalt, Claire J. ;
Binions, Russell ;
Palgrave, Robert ;
Parkin, Ivan P. .
DALTON TRANSACTIONS, 2008, (05) :591-595
[7]   Synthesis of group 13 sesquialkoxides and their application as precursors to crystalline oxide films [J].
Basharat, Siama ;
Betchley, William ;
Carmalt, Claire J. ;
Barnett, Sarah ;
Tocher, Derek A. ;
Davies, Hywel O. .
ORGANOMETALLICS, 2007, 26 (02) :403-407
[8]   Aerosol assisted chemical vapor deposition of In2O3 films from Me3In and donor functionalized alcohols [J].
Basharat, Siama ;
Carmalt, Claire J. ;
Barnett, Sarah A. ;
Tocher, Derek A. ;
Davies, Hywel O. .
INORGANIC CHEMISTRY, 2007, 46 (22) :9473-9480
[9]   Gallium oxide thin films from the atmospheric pressure chemical vapor deposition reaction of gallium trichloride and methanol [J].
Binions, R ;
Carmalt, CJ ;
Parkin, IP ;
Pratt, KFE ;
Shaw, GA .
CHEMISTRY OF MATERIALS, 2004, 16 (12) :2489-2493
[10]  
*BRUK AXS, 2001, AR DET CONTR DAT INT