Electro-migration of silver alloy wire with its application on bonding

被引:0
|
作者
Wang, Shenggang [1 ]
Gao, Liming [1 ]
Li, Ming [1 ]
Huang, Dacheng [2 ]
Qian, Ken [2 ]
Chiu, Hope [2 ]
机构
[1] Shanghai Jiao Tong Univ, Sch Mat Sci & Engn SMSE, Shanghai 200030, Peoples R China
[2] SanDisk Semicondu, Packaging R&D & Adv MFG Engn, Shanghai, Peoples R China
来源
2013 14TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT) | 2013年
关键词
silver alloy wire; wire bonding; electromigration; cracks; accelerate; ELECTROMIGRATION;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
in recent years, silver alloy wire has been widely used in semiconductor industry. In contrast to conventional gold wire, silver alloy wire has better electrical property, thermal conductivity and lower cost while tends to migrate more easily under high temperature and current density. In this paper, electro-migration (EM) of silver alloy wire after wire bonding has been studied. Under accelerated test, cracks forms not only on silver alloy wire surface but also in silver alloy wire while gold wire remain the same. Silver ion not only migrates on the wire surface also inside the wire. Temperature and current density both accelerate the EM. The conclusion could be a reference for further gold reduction of Au/Ag alloy wire in semiconductor bonding.
引用
收藏
页码:789 / +
页数:2
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